Tuesday, April 23, 1:40 PM~5:00 PM Ballroom B

J2 ： Energy-efficient Technologies

Chair(s)： Kazuhiko ENDO, Tohoku University
Harry H. Chen, MediaTek Inc.

• 
  1:40 PM~2:10 PM

  J2-1 Development of 3DIC/TSV Technology and Its Application to Artificial Retina for Visual Sensory Recovery
  

  Tetsu Tanaka, Tohoku University
  

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• 
  2:10 PM~2:40 PM

  J2-2 The layer transfer technology of Ge for advanced CMOS
  

  Tatsuro Maeda, National Institute of Industrial Science and Technology
  

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• 
  2:40 PM~3:10 PM

  J2-3 Modeling and simulation of carrier transport properties in 4H-SiC
  

  Hajime Tanaka, Osaka University

  
  

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• 
  3:30 PM~4:00 PM

  J2-4 Neuromorphic Computing for Energy-Efficient Edge Intelligence
  

  Priya Panda, Yale University
  

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• 
  4:00 PM~4:30 PM

  J2-5 What Can youTtrade for Energy-efficient Foundation-IP in FinFET Process?
  

  Heng-Liang Huang, MediaTek Inc.
  

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• 
  4:30 PM~5:00 PM

  J2-6 Ultra-Low-Power Receivers in Self-Powered Industrial IoT Applications
  

  Kuo-Ken Huang, Everactive Inc.
  

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Wednesday, April 24, 1:40 PM~5:00 PM Ballroom B

J5 ： Power Devices and Electronics

Chair(s)： Ionut Radu, SOITEC
Ke-Horng Chen, National Yang Ming Chiao Tung University

• 
  1:40 PM~2:10 PM

  J5-1 Wide band-gap material transfer using Smart CutTM technology for power electronics
  

  Julie Widiez, CEA-Leti
  

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• 
  2:10 PM~2:40 PM

  J5-2 Technology for 200 mm SiC Crystals and Substrates
  

  Bjorn Magnusson, STMicroelectronics Silicon Carbide AB
  

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• 
  2:40 PM~3:10 PM

  J5-3 Analysis of the various SiC power MOSFETs
  

  Kung-Yen Lee, National Taiwan University
  

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• 
  3:30 PM~4:00 PM

  J5-4 Chip-Level Condition Monitoring on Wide Bandgap Power Devices: Challenges & Opportunities
  

  D. Brian Ma, The University of Texas at Dallas
  

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• 
  4:00 PM~4:30 PM

  J5-5 Integrated Driver for 10 MHz GaN Synchronous Buck Converter
  

  Ching-Jan Chen, National Taiwan University
  

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• 
  4:30 PM~5:00 PM

  J5-6 8-inch GaN Power Transistor Technology Using a Si-compatible Fab Facility
  

  Shyh-Chiang Shen, Vanguard International Semiconductor Corporation
  

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PAGE CONTENTS

• -J2 :
   Energy-efficient Technologies
• -J5 :
   Power Devices and Electronics