Tuesday, April 23, 1:40 PM~5:00 PM Ballroom B
J2 Energy-efficient Technologies

  • the photo of Speaker
    1:40 PM~2:10 PM
    J2-1 Development of 3DIC/TSV Technology and Its Application to Artificial Retina for Visual Sensory Recovery
    Tetsu Tanaka, Tohoku University
  • the photo of Speaker
    2:10 PM~2:40 PM
    J2-2 The layer transfer technology of Ge for advanced CMOS

    Tatsuro Maeda, National Institute of Industrial Science and Technology

  • the photo of Speaker
    2:40 PM~3:10 PM
    J2-3 Modeling and simulation of carrier transport properties in 4H-SiC
    Hajime Tanaka, Osaka University

  • the photo of Speaker
    3:30 PM~4:00 PM
    J2-4 Neuromorphic Computing for Energy-Efficient Edge Intelligence
    Priya Panda, Yale University
  • the photo of Speaker
    4:00 PM~4:30 PM
    J2-5 What can you trade for energy-efficient Foundation-IP in FinFET Process?
    Heng-Liang Huang, MediaTek Inc.
  • the photo of Speaker
    4:30 PM~5:00 PM
    J2-6 Ultra-Low-Power Receivers in Self-Powered Industrial IoT Applications
    Kuo-Ken Huang, Everactive Inc.

Wednesday, April 24, 1:40 PM~5:00 PM Ballroom B
J5 Power Devices and Electronics

  • the photo of Speaker
    1:40 PM~2:10 PM
    J5-1 Wide band-gap material transfer using Smart CutTM technology for power electronics
    Julie Widiez, CEA-LETI
  • the photo of Speaker
    2:10 PM~2:40 PM
    J5-2 Technology for 200 mm SiC Crystals and Substrates
    Bjorn Magnusson, STMicroelectronics Silicon Carbide AB
  • the photo of Speaker
    2:40 PM~3:10 PM
    J5-3 Analysis of the various SiC power MOSFETs
    Kung-Yen Lee, National Taiwan University
  • the photo of Speaker
    3:30 PM~4:00 PM
    J5-4 Chip-Level Condition Monitoring on Wide Bandgap Power Device
    DongSheng (Brian) Ma, The University of Texas at Dallas
  • the photo of Speaker
    4:00 PM~4:30 PM
    J5-5 Integrated Driver for 10 MHz GaN Synchronous Buck Converter
    Ching-Jan Chen, National Taiwan University
  • the photo of Speaker
    4:30 PM~5:00 PM
    J5-6 8-inch GaN Power Transistor Technology Using a Si-compatible fab facility
    Shyh-Chiang Shen, Vanguard International Semiconductor Corporation

Top