Tuesday, April 23, 1:40 PM~5:00 PM Ballroom B
J2 Energy-efficient Technologies


Wednesday, April 24, 1:40 PM~5:00 PM Ballroom B
J5 Power Devices and Electronics

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    1:40 PM~2:10 PM
    J5-1 Wide band-gap material transfer using Smart CutTM technology for power electronics
    Julie Widiez, CEA-Leti
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    2:10 PM~2:40 PM
    J5-2 Technology for 200 mm SiC Crystals and Substrates
    Bjorn Magnusson, STMicroelectronics Silicon Carbide AB
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    2:40 PM~3:10 PM
    J5-3 Analysis of the various SiC power MOSFETs
    Kung-Yen Lee, National Taiwan University
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    3:30 PM~4:00 PM
    J5-4 Chip-Level Condition Monitoring on Wide Bandgap Power Devices: Challenges & Opportunities
    D. Brian Ma, The University of Texas at Dallas
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    4:00 PM~4:30 PM
    J5-5 Integrated Driver for 10 MHz GaN Synchronous Buck Converter
    Ching-Jan Chen, National Taiwan University
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    4:30 PM~5:00 PM
    J5-6 8-inch GaN Power Transistor Technology Using a Si-compatible Fab Facility
    Shyh-Chiang Shen, Vanguard International Semiconductor Corporation

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