TSA Best Student Paper Award

In 2005, the Symposium started the Best Student Paper Award annual contest. The selection will be based on the paper quality evaluated by technical committee members, as well as the presentation of the paper at the symposium. The paper should be presented by the key author who is a full-time student at the time of paper presentation. The Best Student Paper Award will be presented to the winning student at the next year’s symposium.

2024 TSA Best Student Paper Award Winners ~ Congratulations!

The 2024 TSA Best Student Paper Award will be presented at 2025 International VLSI Symposium on Technology, Systems and Applications opening ceremony and each winner will be rewarded by a certificate and US$500. Besides, the Symposium will also offer the winners the waiver of registration fee to attend the 2025 International VLSI Symposium on Technology, Systems and Applications.

• An RRAM-Based 40.6 TOPS/W Energy-Efficient AI Inference Accelerator with Quad Neuromorphic-Processor-Unit

for Highly Contrast Recognition

Co-authors:Y. L. Lin¹, Y. R. Liu¹, T. C. Kao¹, M. Y. Lee², J. C. Guo¹, T. –H. Hou^1,2and Steve S. Chung¹

¹National Yang Ming Chiao Tung University

²Taiwan Semiconductor Research Institute

• A New Ultra-Low Voltage Metal Fuse for High Density OTP Applications

Co-authors:Li-Yu Wang¹, Kuan-Ju Chen¹, Perng-Fei Yuh², Yih Wang²_, Jonathan Chang², Ya-Chin King¹

and Chrong Jung Lin¹

¹National Tsing Hua University

²TSMC

• Contact Optimization Through Annealing and Edge Functionalization Towards 2D TMD Nanosheet Devices

Co-authors: Meng-Zhan Li^1,2, Terry Y. T. Hung², Wei Sheng Yun², Sui An Chou², Chen-Feng Hsu², T. Y. Lee², Chao-Ching Cheng²,

Iuliana P. Radu² and Minn-Tsong Lin^1,3

¹National Taiwan University

²TSMC

³ Academia Sinica

2025 TSA Best Student Paper Award Candidates

• T2-1 OTP-Generated Physical Unclonable Function for Hardware Security of AIoT Devices in Logic CMOS Platform

Co-authors: M. Y . Lin , C. W. Liang, Y. K. Wang, P. H. Shih, J. C. Guo and Steve S. Chung

National Yang Ming Chiao Tung University

• T2-2 Logic-Compatible Low-Voltage Complementary Analog Memory by CMOS FinFET

Technology

Co-authors: Hsin-Hung Yeh, Min-Hsun Chuang, Jiaw-Ren Shih, Chrong-Jung Lin and Ya-Chin King

National Tsing Hua University

• T2-3 Experimental Characterization of Dopant Freeze-out Effect Enhanced Electrical Variability in Cryogenic 16-nm Complementary FinFETs

Co-authors: Jia Zhe Ao¹, Rui Qi Lin², Pin Jie Pu², Chen Yan Lin², E Ray Hsieh^1,3, Chien-Nan Kuo³ and Pei-Wen Li³

¹ National Tsing Hua University,

² National Central University

³ National Yang Ming Chiao Tung University

• T4-1 CROSS-LAYER MODELING OF SELF-HEATING COUPLED RELIABILITY WITH BACK SIDE POWER DELIVERY NETWORK

Co-authors: Yu Li, Cong Shen, Sihao Chen, Runsheng Wang and Lining Zhang

Peking University

• T6-1 Superlattice HfZrO₂ Ultra-Thin Poly-Si Channel (3.5 nm) Junctionless 1T FeTFTs Featuring Nearly Zero Memory Window Degradation Rate (2.8%) and Robust 10 K to 423 K Retention for 3-D NAND NVMs and Neuromorphic Systems

Co-authors: Dong-Ru Hsieh¹, Zi-Yang Hong¹, Huai-En Luo¹, Li-Ting Chou¹, Wei-Ju Yeh¹, Jia-Chian Ni¹, Shang-Lin Hsieh¹,

Ciao-Fen Chen^1,2, Yen-Fu Lin², Shun-Tsung Lo¹ and Tien-Sheng Chao¹

¹ National Yang Ming Chiao Tung University

² National Chung Hsing University

• T8-1 From MRAM to SP-MTJ: An Ultrathin Mo Insertion in Magnetic Tunnel Junction-based P-bits for Solving Combinatorial Optimization Problem

Co-authors: Yu-Hsuan Lin¹, Ching Shih^1,2, Ming-Chun Hong^1,2, Chen-Yu Yang^1,2, Guan-Long Chen², Hsin-Han Lee², Yu-Chen Hsin², Chiao-Yun Lo², Sin-You Huang², Ting-Syun Huang¹, Cheng-Yi Shih², Shan-Yi Yang², I-Jung Wang², Yao-Jen Chang², Shih-Ching Chiu²,

Yi-Hui Su², Chih-Yao Wang², Kuan-Ming Chen², Ho-Lin Tsai², Jeng-Hua Wei², Shyh-Shyuan Sheu², Wei-Chung Lo², Shih-Chieh Chang² and Tuo-Hung Hou¹

¹ National Yang Ming Chiao Tung University

² Industrial Technology Research Institute

• T8-2 Improved STT Efficiency with Ultrathin Magnesium Composite Free Layer for Energy-Efficient MRAM

Co-authors: Tsai-Yu Wu¹, Chen-Yu Yang^1,2, Yu-Ho Kao¹, Ming-Chun Hong^1,2, Guan-Long Chen², Hsin-Han Lee², Yu-Chen Hsin²,

Chiao-Yun Lo², Sin-You Huang², Yu-Tong Zhan¹, Cheng-Yi Shih², Shan-Yi Yang², I-Jung Wang², Yao-Jen Chang², Shih-Ching Chiu²,

Yi-Hui Su², Chih-Yao Wang², Kuan-Ming Chen², Jeng-Hua Wei², Shyh-Shyuan Sheu², Wei-Chung Lo², Shih-Chieh Chang² and

Tuo-Hung Hou¹

¹ National Yang Ming Chiao Tung University

² Industrial Technology Research Institute

• T10-1 Atomic Layer Epitaxial 2D Dielectric h-AlN as Interfacial Layer with Excellent

Leakage and EOT < 1 nm for TMD-FETs

Co-authors: Shin-Yuan Wang¹, Yu-Chin Lin¹, Yu-Che Huang¹, Chenming Hu^1,2and Chao-Hsin Chien¹

¹ National Yang Ming Chiao Tung University

² University of California

> History of the TSA Best Paper Award