TSA Best Student Paper Award

In 2005, the Symposium started the Best Student Paper Award annual contest. The selection will be based on the paper quality evaluated by technical committee members, as well as the presentation of the paper at the symposium. The paper should be presented by the key author who is a full-time student at the time of paper presentation. The Best Student Paper Award will be presented to the winning student at the next year’s symposium.

2022 TSA Best Student Paper Award Winners ~ Congratulations!

The 2022 TSA Best Student Paper Award will be presented at 2023 International VLSI Symposium on Technology, Systems and Applications opening ceremony and each winner will be rewarded by a certificate and US$500. Besides, the Symposium will also offer the winners the waiver of registration fee to attend the 2023 International VLSI Symposium on Technology, Systems and Applications.
6 Stacked Ge0.95Si0.05 nGAAFETs without Parasitic Channels by Wet Etching
Chun-Yi Cheng, Wan-Hsuan Hsieh, Bo-Wei Huang, Yi-Chun Liu, Chien-Te Tu, Chung-En Tsai, Shee-Jier Chueh, Guan-Hua Chen, and C. W. Liu
National Taiwan University
CeO2-Doped Hf0.5Zr0.5O2 Ferroelectrics for High Endurance Embedded Memory Applications 
Z. Yu1, B. Saini1, P.J. Liao2, Y.K. Chang2, V. Hou2, C.H. Nien2, Y.C. Shih2, S.H. Yeong2, V. Afanas’ev3, F. Huang1, J.D. Baniecki4, A. Mehta4, C.S. Chang2, H.-S.P. Wong1, W. Tsai1, P.C. McIntyre1,4
1Stanford University, 2TSMC, 3University of Leuven, 4SLAC National Accelerator Laboratory 
2023 TSA Best Student Paper Award Candidates
• T3-1 Effect of Ga-Doping on Atomic-Layer-Deposited Ultrathin InGaO Thin Film Transistors with BEOL-Compatibility
Jie Zhang, Zhuocheng Zhang, Dongqi Zheng, Zehao Lin, Adam Charnas and Peide. D. Ye
Purdue University

• T3-2 Stacked Two Ge0.98Si0.02 Nanowire nFETs with High-κ Dielectrics Featuring
High ION per Footprint of 4800 μA/μm at VOV=VDS=0.5V
Yu-Rui Chen, Chien-Te Tu, Zefu Zhao, Yi-Chun Liu, Bo-Wei Huang, Yifan Xing, Guan-Hua Chen and C. W. Liu
National Taiwan University

•  T3-3 Vertical GeSn/SiGeSn GAA Nanowire n-FETs with High Electron Mobility
Yannik Junk1, Marvin Frauenrath2, Yi Han1, Jingxuan Sun1, Omar Concepción Diaz1, Jin-Hee Bae1, Jean-Michel Hartmann2, Detlev Grützmacher1, Dan Buca1 and Qing-Tai Zhao1
1Forschungszentrum Jülich
2MINATEC Campus and University of Grenoble Alps

T5-2 NLS based Modeling of Temperature-dependent Phase Transition Characteristics for Antiferroelectric/Ferroelectric Hafnium Zirconium Oxides
Yu-Chen Chen1, Kuo-Yu Hsiang1,2, Min-Hung Lee2 and Pin Su1
1National Yang Ming Chiao Tung University
2 National Taiwan Normal University
•  T5-5 Fabrication of Low-Power RRAM for Stateful Hyperdimensional Computing
T. Dubreuil, S. Barraud, B. Previtali, S. Martinie, J. Lacord, S. Martin, N. Castellani, A. Anotta and F. Andrieu
CEA, Leti, Univ. Grenoble Alpes

•  T7-1 16nm FinFET DUV Detector Array in Fully Compatible FinFET Logic Process
Wei-Hwa Lin1, Jiaw-Ren Shih1, Jonathan Chang2, Yih Wang2, Perng-Fei Yuh2, Ya-Chin King1 and Chrong Jung Lin1
1National Tsing Hua University
2Taiwan Semiconductor Manufacturing Company

•  T9-2 Design of High-RA STT-MRAM for Future Energy-Efficient In-Memory Computing
Ming-Chun Hong1,2, Yi-Hui Su2, Guan-Long Chen2, Yu-Chen Hsin2, Yao-Jen Chang2, Kuan-Ming Chen2, Shan-Yi Yang2, I-Jung Wang2, SK Ziaur Rahaman2, Hsin-Han Lee2, Jeng-Hua Wei2, Shyh-Shyuan Sheu2, Wei-Chung Lo2, Shih-Chieh Chang2 and Tuo-Hung Hou1
1National Yang Ming Chiao Tung University
2Industrial Technology Research Institute

•  T9-4 Analysis of Monolithic 3D SRAM with Back-End-of-Line-compatible Transistors
Yu-Cheng Lu, Ming Lee, Zi-Yuan Huang and Vita Pi-Ho Hu
National Taiwan University