Tuesday, August 11, 3:30 PM~5:50 PM Ballroom A
T2 Power Electronics

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    3:30 PM~4:05 PM
    T2-1 Disrupting Automotive Electronics: Big Changes Enabled by Small Electronic Systems.
    Andre Blum, AUDI AG
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    4:05 PM~4:40 PM
    T2-2 Co-existence of SiC, GaN and SOI for High Efficiency Power Electronics Application
    Howard Sin, Soitec Microelectronics Singapore
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    4:40 PM~5:15 PM
    T2-3 Progress and Future Prospects of High-Voltage SiC Power Devices
    Tsunenobu Kimoto, Kyoto University
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    5:15 PM~5:50 PM
    T2-4 Accelerating Commercialization of SiC Power Electronics
    Victor Veliadis, PowerAmerica/North Carolina State University

Wednesday, August 12, 10:20 AM~12:40 PM Ballroom A
T6 Interconnect and Parasitics

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    10:20 AM~10:55 AM
    T6-1 The Resistivity Bottleneck: The Search for New Interconnect Metals
    Daniel Gall, Rensselaer Polytechnic Institute
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    10:55 AM~11:30 AM
    T6-2 Atomically-Precise Deposition and Etching of Metals using Electrochemistry – New Paradigms for Metallization of Integrated Circuits
    Rohan Akolkar, Case Western Reserve University
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    11:30 AM~12:05 PM
    T6-3 1D van der Waals Materials for Potential Interconnect Applications: From Ultrathin Nanowires to Single Atomic Chains
    Peide Ye, Purdue University
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    12:05 PM~12:40 PM
    T6-4 Novel low k Dielectric materials for nano device interconnect technology

    Son Nguyen, IBM Research- AI Hardware Center


Wednesday, August 12, 10:20 AM~12:05 PM Ballroom B
T7 Neuromorphic Computing

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    10:20 AM~10:55 AM
    T7-1 Inference of Deep Neural Networks with Analog Memory Devices
    Stefano Ambrogio, IBM Research
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    10:55 AM~11:30 AM
    T7-2 Power efficient hardware accelerators for machine learning, combinatorial optimization, and pattern matching applications
    John Paul Strachan, Hewlett Packard Enterprise
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    11:30 AM~12:05 PM
    T7-3 Neuromorphic Computing Systems with Emerging Nonvolatile Memories: A Circuits and Systems Perspective
    Yiran Chen, Duke University

Wednesday, August 12, 1:40 PM~5:50 PM Ballroom A
T9 Low Dimensional Materials and Devices

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    1:40 PM~2:15 PM
    T9-1 Manufacturing Methodology for Carbon Nanotube Electronics
    Max Shulaker, Massachusetts Institute of Technology
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    2:15 PM~2:50 PM
    T9-2 Carbon nanotube based high performance and low power CMOS and optoelectronic devices
    Lian-Mao Peng, Peking University
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    2:50 PM~3:25 PM
    T9-3 Enhancing Interconnect Reliability and Performance by 2D Materials
    Zhihong Chen, Purdue University
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    3:45 PM~4:20 PM
    T9-4 Two Dimensional Artificial Synapses for Neuromorphic Computing
    Kah-Wee ANG, National University of Singapore
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    4:20 PM~4:55 PM
    T9-5 Synthesis of High-Quality 2D Materials for Electronic Applications
    Hiroki Ago, Kyushu University
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    4:55 PM~5:30 PM
    T9-6 Two-dimensional Layered Materials for Artificial Synapse
    Tuo-Hung Hou, National Chiao Tung University
  • 5:30 PM~5:50 PM
    T9-7 MoS2 based CBRAM with Mo/Ti barrier layer for artificial synapse application
    Asim Senapati, Sreekanth Ginnaram, Mrinmoy Dutta, Siddheswar Maikap
    Chang Gung University, Taiwan

Thursday, August 13, 10:20 AM~12:40 PM Ballroom A
T10 Ferroelectrics-Transistors and Memories

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    10:20 AM~10:55 AM
    T10-1 Fundamental Properties of Ferroelectric and Anti-Ferroelectric Hafnium Zirconium Oxides: Scaling Limit, Switching Speed and Polarization Density
    Peide Ye, Purdue University
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    10:55 AM~11:30 AM
    T10-2 HfO2-based ferroelectric FETs: Performance of single devices and mini-arrays
    Halid Mulaosmanovic, Nanoelectronic Materials Laboratory
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    11:30 AM~12:05 PM
    T10-3 Ferroelectric HfZrO2 FETs for Emerging Technologies
    Min-Hung Lee, National Taiwan Normal University
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    12:05 PM~12:40 PM
    T10-4 Emerging Ferroelectric-HfO2 Based Device Technologies for Energy-Efficient Computing
    Masaharu Kobayashi, The University of Tokyo

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