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Tuesday, August 11, 1:30 PM~3:10 PM Ballroom A
T1 ： RRAM Technology

  • 1:30 PM~1:50 PM
    T1-1 3D Stackable Via RRAM Cells by Cu BEOL Process in FinFET CMOS Technologies
    Cheng-Jun Lin, Wang-Yi Lee, Chrong-Jung Lin, Ya-Chin King, National Tsing Hua University
  • 1:50 PM~2:10 PM
    T1-2 Impact of Bottom Electrode Integration on OxRAM Arrays Variability
    N.-P. Tran, J. Sandrini, A. Persico, J.-F. Nodin,CEA, T. Magis, R. Crochemore, N. Castellani, M.-C. Cyrille, G. Molas, E. Nowak
    CEA
  • 2:10 PM~2:30 PM
    T1-3 98% Endurance Error Reduction by Hard_Verify for40nm TaOX-based ReRAM
    Tsubasa Yonai1, Hiroshi Kinoshita1, Ryutaro Yasuhara2, Ken Takeuchi1
    1Chuo University
    2Panasonic Semiconductor Solutions Co., Ltd.
  • 2:30 PM~2:50 PM
    T1-4

    Empirical Tunneling Model Describing the Retention of 2.5 Mb HfO2 based ReRAM
    Stefan Wiefels, Ulrich Böttger, Stephan Menzel, Dirk Wouters, Rainer Waser RWTH Aachen University
  • 2:50 PM~3:10 PM
    T1-5

    A Study of Read Variability in Backfill Contact Random Access Memory
    Fu-Cheng Chang, Yao-Hung Huang, Chrong-Jung Lin, Ya-Chin King, National Tsing Hua University

Tuesday, August 11, 1:30 PM~4:05 PM Ballroom D
T3 ： Poster Session

  • T3-1 Novel SJ-MOSFET with Disconnected p-pillars for High Robustness
    Xin Tong, Zhaoming Yao, Qian Liu, Hong Yang, Siyang Liu, Wangran Wu, Weifeng Sun
    Southeast University
  • T3-2 General Izhikevich Dynamics in Pr0.7Ca0.3MnO3 RRAM Neuron
    Sandip Lashkare, Shikhar Chouhan, Ashwin Bhat, Udayan Ganguly
    Indian Institute of Technology, Bombay
  • T3-3 Subthreshold Behavior of Ferroelectric Junctionless Transistor
    Manish Gupta, Vita Pi-Ho Hu
    National Central University
  • T3-4 Optimizing READ Variability and Design Guidelines for Ultra-thin (<5nm) Analog Bilayer RRAM
    Jen-Chieh Liu, I-Ting Wang, Wendong Song, Weijie Wang, Hock Koon Lee, Aarthy Mani, Fei Li, Minghua Li, Zhixian Chen,Victor Yi-Qian Zhuo, Yao Zhu
    IME, A*STAR
  • T3-5 Design Considerations for Current-Assisted Photonic Demodulator (CAPD) in Time-of-Flight CMOS Image Sensor
    Cristine Jin Estrada, Ying Xiao, Mansun Chan
    The Hong Kong University of Science and Technology
  • T3-6 Low-environmental-interference & highly-sensitive TMR biosensor for in-vitro diagnosis application
    Yi-Ching Kuo, Hsin-Han Lee, Ding-Yeong Wang, Yao-Jen Chang, Shan-Yi Yang, Yu-Chen Hsin, I-Jung Wang, Guan-Long Chen, Yi-Hui Su, Ziaur Rahaman Shakh, Fang-Ming Chen, Jeng-Hua Wei, Pei-Jer Tzeng, Shyh-Shyuan Sheu, Wei-Chung Lo, Shih-Chieh Chang, Chih-I Wu
    Industrial Technology Research Institute
  • T3-7 Proximity Effect of Selective Co ALD on the Nanoscale
    Michael Breeden, Steven Wolf, Ashay Anurag,Victor Wang, Andrew C. Kummel
    University of California, San Diego
  • T3-8 Carrier Transport in Multilayer n-MoSe2 and p-Germanium Heterojunction Back Gated Field Effect Transistors
    Wasi Uddin, Veerendra Dhyani, Gufran Ahmad, Samaresh Das
    Indian Institute of Technology, Delhi
  • T3-9 Performance Evaluation of Logic Circuits with 2D Negative-Capacitance FETs Considering the Impact of Spacers
    Chia-Chen Lin, Yi-Jui Wu, Wei-Xiang You, Pin Su
    National Chiao Tung University
  • T3-10 Adaptive Random Number Generator Based on RRAM Intrinsic Fluctuation for Reinforcement Learning
    Lin Bao, Zongwei Wang, Zhizhen Yu, Yichen Fang, Yuchao Yang, Yimao Cai, Ru Huang
    Peking University
  • T3-11 A Multi-physics TCAD Framework for Fast and Accurate Simulation of Steep-Slope Si-based Cold Source FET
    Weizhuo Gan1,4, Raphaël Prentki2, Fei Liu3, Jianhui Bu1, Qingzhu Zhang1, Huilong Zhu1,4, Huaxiang Yin1,4, Wenwu Wang1,4, Tianchun Ye1,4, Zhenhua Wu1,4, Hong Guo2
    1Institute of Microelectronics, Chinese Academy of Sciences
    2McGill University
    3Peking University
    4University of Chinese Academy of Sciences
  • T3-12 Impact of Space Charge Modulation on Superjunction-LDMOS
    Aakanksha Mishra1, B. Sampath Kumar2, Jhnanesh Somayaji2, Mayank Shrivastava2 , Ankur Gupta1
    1IIT Delhi
    2IISc Bangalore
  • T3-13 Formation of Ferroelectric Y-doped HfO2 though Atomic Layer Deposition and Low Temperature Post Annealing
    Kazuto Mizutani, Yu Wei Lin, Takuya Hoshii, Hiroshi Funakubo, Hitoshi Wakabayashi, Kazuto Tsutsui, Kuniyuki Kakushima
    Tokyo Institute of Technology
  • T3-14 Simulation of the nanoscale interconnects within a spin-resolved electron transport model
    Artur Useinov1, Hsiu-Hau Lin2, Niazbeck Useinov3, Lenar Tagirov4
    1National Chiao Tung University
    2National Tsing Hua University
    3Kazan Federal University, Russia
    4Zavoisky Physical-Technical Institute, Institute of Applied Research in Kazan, Russia
  • T3-15 Mechanism of Degradation of Ge NMOSFET with Channel Ion Implantation and Its Recovery
    Bing-Yue Tsui, Yu-Chen Chang, Yi-Ju Chen
    National Chiao Tung University
  • T3-16 Thermal performance analysis of a package using non-simulation technique
    Heng-Chieh Chien1, Mei-Jiau Huang2, Zheng-Zhun Chen1
    1Industrial Technology Research Institute
    2National Taiwan University
  • T3-17 Simulation and Design of Ultra-Thin-Body FeFET NVMs Considering Minor Loop Operation
    Feng-Chi Wu, Wei-Xiang You, Pin Su
    National Chiao Tung University
  • T3-18 Platinum membrane on Ti/n-Si substrate for dopamine detection
    Anisha Roy1, Siddheswar Maikap1,2, Pei-Jer Tzeng3,
    Jiantai Timothy Qiu2,4
    1Department of Electronics Engineering, Chang Gung University
    2Division of Gyn-Oncology, Department of Obs/Gyn, Chang Gung Memorial Hospital
    3Electronics and Optoelectronics System Research Laboratories, Industrial Technology Research Institute
    4Department of Biomedical Sciences, School of Medicine, Chang Gung University
  • T3-19 Scaling Limitations of Line TFETs at Sub-8-nm Technology Node
    NARASIMHULU THOTI, Yiming Li, Sekhar Reddy Kola
    National Chiao Tung University
  • T3-20 Analysis of Negative Capacitance MOSFETs Characteristic with Spacer
    Yu-Chun Lee, Sekhar Reddy Kola, Chieh-Yang Chen, Min-Hui Chuang, Yiming Li
    National Chiao Tung University
  • T3-21 Analysis of Racetrack-Coupled Mach Zehnder Interferometer for High-Speed Communication
    Kai-Ning Ku1, Po-Chih Chang1, Chung-Chih Wang1, Chen-Yu Lin1, Chi-Hsiang Hsu1, Ting-Hui Chen1, Chien-Ying Huang1, Sin-Jhu Wun1, Chi-Sen Lee1,Shang-Chun Chen1, Ming-Chang Lee1,2, Chien-Chung Lin1,3, Chih-I Wu1,4
    1Industrial Technology Research Institute
    2Institute of Photonics Technologies, National Tsing-Hua University
    3Institute of Photonic System, College of Photonics, National Chiao Tung University
    4Graduate Institute of Photonics and Optoelectronics, National Taiwan University
  • T3-22 Giant Electroresistance Switching of Two-dimensional Ferroelectric α-In2Se3 on p+-Si

    Ko-Chun Lee1,2, José Ramón Durán Retamal1, Fei Xue3, Bin Cheng1, Hao-Ling Tang3, Ming-Hui Chiu3, Wei-Jin Hu4, Chih-I Wu5, Mei-Hsin Chen6, Lain-Jong Li7, Chen-Hsin Lien2, Jr-Hau He1
    1King Abdullah University of Science and Technology, Thuwal
    2National Tsing Hua University
    3Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal
    4Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, China
    5National Taiwan University
    6National Taipei University of Technology
    7University of New South Wales

  • T3-23 A Novel 1T DRAM with Shell/Core Dual-Gate Architecture
    Md. Hasan Raza Ansari, Seongjae Cho, Gachon University

Tuesday, August 11, 1:30 PM~2:50 PM Mezzanine A+B
T4 ： Ferroelectric and Steep Slope Transistor

  • 1:30 PM~1:50 PM
    T4-1 Ab Initio Study on Tuning the Ferroelectricity of Orthorhombic HfO2
    Sheng-Ting Fan1,Yun-Wen Chen1,Pin-Shiang Chen1, C. W. Liu12
    1Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan
    2Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan
  • 1:50 PM~2:10 PM
    T4-2

    DFT Models of Negative Capacitance
    Kisung Chae12, Kyeongjae Cho2, Andrew Kummel1
    1University of California, San Diego
    2University of Texas at Dallas
  • 2:10 PM~2:30 PM
    T4-3 Analysis of Steep SS Mechanism on PN-Body Tied SOI-FET with 65 nm Thin Box FD-SOI
    Takayuki Mori, Jiro Ida, Keita Daimatsu
    Kanazawa Institute of Technology
  • 2:30 PM~2:50 PM
    T4-4

    Ferroelectric Hf0.5Zr0.5O2 p-type Ge Nanowire GAAFET with Junctionless and Inversion mode
    Yung-Chun Wu1, Yu-Chen Tsai1, Yu-Ning Chen1, Meng-Ju Tsai1, Chong Jhe Sun1, Siao-Cheng Yan1, Hao-Hsiang Chang1, Tzu-Ming Chu1, Chieng-Chung Hsu1, Fu-Ju Hou2
    1National Tsing Hua University, Hsinchu
    2Taiwan Semiconductor Research Institute

Tuesday, August 11, 3:10 PM~5:10 PM Mezzanine A+B
T5 ： Processing

  • 3:10 PM~3:30 PM
    T5-1 Infrared Response of Stacked GeSn Transistors
    Hsiao-Hsuan Liu, Yu-Shiang Huang, Fang-Liang Lu, Hung-Yu Ye, C. W. Liu National Taiwan University
  • 3:30 PM~3:50 PM
    T5-2 Improving Interface State Density of TiN/HfO2/IL Gate Stack on Si0.5Ge0.5 by Optimization of Post Metallization Annealing and Oxygen Pressure
    Meng-Chien Lee1, Wei-Li Lee1, Cheng-Yu Yu1, Hung-Ju Lin1, Hsien-Ho Liu1, Jun-Lin Zhang1, Shin-Yuan Wang1, Chen-Han Chou1, Guang-Li Luo2 and Chao-Hsin Chien1
    1National Chiao Tung University
    2Taiwan Semiconductor Research Institute, National Applied Research Laboratories
  • 3:50 PM~4:10 PM
    T5-3 Fabrication and device characterization of large linear dynamic range tunnel magnetoresistance (TMR) sensors for system applications
    Fang-Ming Chen1, I-Jung Wang1, Ding-Yeong Wang1, Shan-Yi Yang1, Yu-Chen Hsin1, Yao-Jen Chang1, Hsin-Han Lee1, Guan-Long Chen1, Yi-Ching Kuo1, Yi-Hui Su1, Sk. Ziaur Rahaman1, Jeng-Hua Wei1, Sih-Han Li1, Shyh-Shyuan Sheu1, Wei-Chung Lo1, Shih-Chieh Chang1, Chih-I Wu1,2,3
    1Industrial Technology Research Institute
    2Graduated Institute of Photonics and Optoelectronics, National Taiwan University
    3Department of Electrical Engineering, National Taiwan University
  • 4:10 PM~4:30 PM
    T5-4 600 meV Effective Work Function Tuning by Sputtered WNx Films
    Chung-En Tsai, Chih-Hsiung Huang, Yu-Rui Chen, Chien-Te Tu, Yu-Shiang Huang, C. W. Liu
    National Taiwan University
  • 4:30 PM~4:50 PM
    T5-5

    High Performance GaN HEMT and Ge Fin FET Device Realizing by Atomic-layer Defect-free Etching with Chlorine Neutral Beam
    Daisuke Ohori1,2,3, Niraj Man Shrestha1,3, Yiming Li1,3, Jenn-Hwan Tarng1,3, Seiji Samukawa1-5
    1Department of Electrical and Computer Engineering, National Chiao Tung University
    2Institute of Fluid Science, Tohoku University
    3Center for mmWave Smart Radar System and Technologies, National Chiao Tung University
    4National Institute of Advanced Industrial Science and Technology (AIST)
    5Advanced Institute for Materials Research, Tohoku University
  • 4:50 PM~5:10 PM
    T5-6 Deposition of High Thermal Conductivity AlN Heat Spreader Films
    Scott T. Ueda1, Aaron McLeod1, Michelle Chen2, Chris Perez2, Eric Pop2, Dan Alvarez3, Andrew C. Kummel1
    1University of California, San Diego
    2Stanford University
    3RASIRC, USA

Wednesday, August 12, 10:20 AM~12:00 PM Ballroom C
T8 ： Advanced Transistors for Digital and Analog/RF Applications

  • 10:20 AM~10:40 AM
    T8-1 Investigation of the Impact of Internal Metal Gate — From MFM Capacitors to Two-Layer-Stacked GAA Poly-Si NW FE-FETs
    Shen-Yang Lee1, Han-Wei Chen1, Chun-Chih Chung1, Chiuan-Huei Shen1, Po-Yi Kuo2, Yu-En Huang1, Hsin-Yu Chen1, Tien-Sheng Chao1
    1National Chiao Tung University
    2Feng Chia University
  • 10:40 AM~11:00 AM
    T8-2

    Comparative experimental study of junctionless and inversion-mode nanowire transistors for analog applications
    D. Bosch12, J.P. Colinge1, J. Lugo1, A. Tataridou2, C. Theodorou2, X. Garros1, S. Barraud1, J. Lacord1, B. Sklenard1, M. Casse1, L. Brunet1, P. Batude1, C. Fenouillet-Beranger1, D. Lattard1, J. Cluzel1, F. Allain1, R. Nait Youcef1, J. M. Hartmann1, C. Vizioz1, G. Audoit1, F. Balestra2, F. Andrieu1
    1CEA-LETI
    2IMEP-LAHC 
  • 11:00 AM~11:20 AM
    T8-3

    Stacked Ge Nanosheet GAAFETs Fabrication and Strain Effects Measurement
    Chun-Lin Chu, Guang-Li Luo, Kehuey Wu, Shih-Hong Chen, 
    Bo-Yuan Chen, Wen-Fa Wu, Wen-Kuan Yeh
    Taiwan Semiconductor Research Institute
  • 11:20 AM~11:40 AM
    T8-4

    Quaternary Barrier AlInGaN/GaN-on-Si High Electron Mobility Transistor with Record FT-Lg Product of 13.9 GHz-μm
    Po-Tsung Tu1, Indraneel Sanyal2, Po-Chun Yeh1, Heng-Yuan Lee1, Li-Heng Lee1, Chih-I Wu1,3,4, Jen-Inn Chyi2
    1Industrial Technology Research Institute
    2National Central University
    3Graduated Institute of  Photonics and Optoelectronics, National Taiwan University
    4Department of Electrical Engineering, National Taiwan University
  • 11:40 AM~12:00 PM
    T8-5 Design of Low Voltage Vertical Channel Face-tunneling TFET Using Ge/SiGe Materials and Its SRAM Circuit Performance
    A. Gupta, C, K, Chiang, W. Y. Yang, E R Hsieh, Steve S. Chung
    National Chiao Tung University

Thursday, August 13, 10:20 AM~11:40 AM Ballroom B
T11 ： Analog & AI

  • 10:20 AM~10:40 AM
    T11-1

    Stochastic STT-MRAM Spiking Neuron Circuit
    Fu-Xiang Liang1, Paritosh Sahu1, Ming-Hung Wu1, Jeng-Hua Wei2, Shyh-Shyuan Sheu2, Tuo-Hung Hou12
    1National Chiao Tung University
    2Industrial Technology Research Institute
  • 10:40 AM~11:00 AM
    T11-2 MRAM Acceleration Core for Vector Matrix Multiplication and XNOR-Binarized Neural Network Inference
    Shifan Gao, Bing Chen, Yiming Qu, Yi Zhao
    Zhejiang University
  • 11:00 AM~11:20 AM
    T11-3 Low temperature high voltage analog devices in a 3D sequential integration
    C. CAVALCANTE1,3, X. Garros1, P. Batude1, A. Tataridou2,
    J. Lacord1, M. Casse1, C. Theodorou2, T. Karatsori2, R. Gassilloud1, C. Fenouillet-Beranger1, L. Brunet1, O. Rozeau1, N. Rambal1, F. Gaillard1, F. Ponthenier1, F. Allain1, G. Romano1,4, G. Ghibaudo2, J.P. Colinge1, M. Vinet1, F. Andrieu1
    1CEA LETI
    2IMEP-LAHC
    3Université Grenoble Alpes
    4STMicroelectronics
  • 11:20 AM~11:40 AM
    T11-4

    Gradual Resistive Switching in Electron Beam Irradiated ReS2 Transistor and its Application as Electronic Synapse
    Sifan Li, Bochang Li, Xuewei Feng, Li Chen, Yesheng Li, Li Huang, Xiao Gong, Xuanyao Fong, Kah-Wee Ang
    National University of Singapore

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