Tuesday, August 11, 1:30 PM~3:10 PM Ballroom A

T1 ： RRAM Technology

• 1:30 PM~1:50 PM

  T1-1 3D Stackable Via RRAM Cells by Cu BEOL Process in FinFET CMOS Technologies
  

  Cheng-Jun Lin, Chrong-Jung Lin, Wang-Yi Lee, Ya-Chin King

  National Tsing Hua University

• 1:50 PM~2:10 PM

  T1-2 Impact of Bottom Electrode Integration on OxRAM Arrays Variability
  

  N.-P. Tran, J. Sandrini, A. Persico, J.-F. Nodin,CEA, T. Magis, R. Crochemore, N. Castellani, M.-C. Cyrille, G. Molas, E. Nowak

  CEA

• 2:10 PM~2:30 PM

  T1-3 98% Endurance Error Reduction by Hard_Verify for 40nm TaO_X-based ReRAM
  

  Tsubasa Yonai¹, Hiroshi Kinoshita¹, Ryutaro Yasuhara², Ken Takeuchi^{1
  1}Chuo University
  ²Panasonic Semiconductor Solutions Co., Ltd.
  

• 2:30 PM~2:50 PM

  T1-4 Empirical Tunneling Model Describing the Retention of 2.5 Mb HfO₂ based ReRAM
  

  Stefan Wiefels, Ulrich Böttger, Stephan Menzel, Dirk Wouters, Rainer Waser

  RWTH Aachen University

• 2:50 PM~3:10 PM

  T1-5 A Study of Read Variability in Backfill Contact Random Access Memory
  

  Fu-Cheng Chang, Chrong-Jung Lin, Ya-Chin King

  National Tsing Hua University

---

Tuesday, August 11, 1:30 PM~6:30 PM Ballroom D

T3 ： Poster Session

• T3-1 Novel SJ-MOSFET with Disconnected p-pillars for High Robustness
  

  Xin Tong, Zhaoming Yao, Qian Liu, Hong Yang, Siyang Liu, Wangran Wu, Weifeng Sun
  Southeast University
  

• T3-2 General Izhikevich Dynamics in Pr_0.7Ca_0.3MnO₃ RRAM Neuron
  

  Sandip Lashkare, Shikhar Chouhan, Ashwin Bhat, Udayan Ganguly
  Indian Institute of Technology, Bombay
  

• T3-3 Subthreshold Behavior of Ferroelectric Junctionless Transistor
  

  Manish Gupta, Vita Pi-Ho Hu
  National Central University
  

• T3-4 Optimizing READ Variability and Design Guidelines for Ultra-thin (<5nm) Analog Bilayer RRAM
  

  Jen-Chieh Liu, I-Ting Wang, Wendong Song, Weijie Wang, Hock Koon Lee, Aarthy Mani, Fei Li, Minghua Li, Zhixian Chen,Victor Yi-Qian Zhuo, Yao Zhu
  IME, A*STAR
  

• T3-5 Simulation of gated GaAs-AlGaAs resonant tunneling diodes for tunable terahertz communication applications
  

  Amretashis Sengupta, Patryk Maciazek, Oves Badami, Cristina Medina-Bailon, Tapas Dutta, Fikru Adamu-Lema, Vihar Georgiev, Asen Asenov
  University of Glasgow
  

• T3-6 Design Considerations for Current-Assisted Photonic Demodulator (CAPD) in Time-of-Flight CMOS Image Sensor
  

  Cristine Jin Estrada, Ying Xiao, Mansun Chan
  The Hong Kong University of Science and Technology
  

• T3-7 Low-environmental-interference & highly-sensitive TMR biosensor for in-vitro diagnosis application
  

  Yi-Ching Kuo, Hsin-Han Lee, Ding-Yeong Wang, Yao-Jen Chang, Shan-Yi Yang, Yu-Chen Hsin, I-Jung Wang, Guan-Long Chen, Yi-Hui Su, Ziaur Rahaman Shakh, Fang-Ming Chen, Jeng-Hua Wei, Pei-Jer Tzeng, Shyh-Shyuan Sheu, Wei-Chung Lo, Shih-Chieh Chang, Chih-I Wu
  Industrial Technology Research Institute
  

• T3-8 Proximity Effect of Selective Co ALD on the Nanoscale
  

  Michael Breeden, Steven Wolf, Ashay Anurag,Victor Wang, Andrew C. Kummel
  University of California, San Diego
  

• T3-9 Carrier Transport in Multilayer n-MoSe₂ and p-Germanium Heterojunction Back Gated Field Effect Transistors
  

  Wasi Uddin, Veerendra Dhyani, Gufran Ahmad, Samaresh Das
  Indian Institute of Technology, Delhi
  

• T3-10 Performance Evaluation of Logic Circuits with 2D Negative-Capacitance FETs Considering the Impact of Spacers
  

  Chia-Chen Lin, Yi-Jui Wu, Wei-Xiang You, Pin Su
  National Chiao Tung University
  

• T3-11 Adaptive Random Number Generator Based on RRAM Intrinsic Fluctuation for Reinforcement Learning
  

  Lin Bao, Zongwei Wang, Zhizhen Yu, Yichen Fang, Yuchao Yang, Yimao Cai, Ru Huang
  Peking University
  

• T3-12 A Multi-physics TCAD Framework for Fast and Accurate Simulation of Steep-Slope Si-based Cold Source FET
  

  Weizhuo Gan^1,4, Raphaël Prentki², Fei Liu³, Jianhui Bu¹, Qingzhu Zhang¹, Huilong Zhu^1,4, Huaxiang Yin^1,4, Wenwu Wang^1,4, Tianchun Ye^1,4, Zhenhua Wu^1,4, Hong Guo^{2
  1}Institute of Microelectronics, Chinese Academy of Sciences
  ²McGill University
  ³Peking University
  ⁴University of Chinese Academy of Sciences
  

• T3-13 Impact of Space Charge Modulation on Superjunction-LDMOS
  

  Aakanksha Mishra¹, B. Sampath Kumar², Jhnanesh Somayaji², Mayank Shrivastava² , Ankur Gupta^{1
  1}IIT Delhi
  ²IISc Bangalore
  

• T3-14 Formation of Ferroelectric Y-doped HfO₂ though Atomic Layer Deposition and Low Temperature Post Annealing
  

  Kazuto Mizutani, Yu Wei Lin, Takuya Hoshii, Hiroshi Funakubo, Hitoshi Wakabayashi, Kazuto Tsutsui, Kuniyuki Kakushima
  Tokyo Institute of Technology
  

• T3-15 Simulation of the nanoscale interconnects within a spin-resolved electron transport model
  

  Artur Useinov¹, Hsiu-Hau Lin², Niazbeck Useinov³, Lenar Tagirov^{4
  1}National Chiao Tung University
  ²National Tsing Hua University
  ³Kazan Federal University, Russia
  ⁴Zavoisky Physical-Technical Institute, Institute of Applied Research in Kazan, Russia
  

• T3-16 Mechanism of Degradation of Ge NMOSFET with Channel Ion Implantation and Its Recovery
  

  Bing-Yue Tsui, Yu-Chen Chang, Yi-Ju Chen
  National Chiao Tung University
  

• T3-17 Thermal performance analysis of a package using non-simulation technique
  

  Heng-Chieh Chien¹, Mei-Jiau Huang², Zheng-Zhun Chen^{1
  1}Industrial Technology Research Institute
  ²National Taiwan University
  

• T3-18 Simulation and Design of Ultra-Thin-Body FeFET NVMs Considering Minor Loop Operation
  

  Feng-Chi Wu, Wei-Xiang You, Pin Su
  National Chiao Tung University
  

• T3-19 Platinum membrane on Ti/n-Si substrate for dopamine detection
  

  Anisha Roy¹, Siddheswar Maikap^1,2, Pei-Jer Tzeng³,
  Jiantai Timothy Qiu^{2,4
  1}Department of Electronics Engineering, Chang Gung University
  ²Division of Gyn-Oncology, Department of Obs/Gyn, Chang Gung Memorial Hospital
  ³Electronics and Optoelectronics System Research Laboratories, Industrial Technology Research Institute
  ⁴Department of Biomedical Sciences, School of Medicine, Chang Gung University
  

• T3-20 Scaling Limitations of Line TFETs at Sub-8-nm Technology Node
  

  NARASIMHULU THOTI, Yiming Li, Sekhar Reddy Kola
  National Chiao Tung University
  

• T3-21 Electrical Characteristic of Negative Capacitance MOSFETs with Spacer
  

  Yu-Chun Lee, Sekhar Reddy Kola, Chieh-Yang Chen, Min-Hui Chuang, Yiming Li
  National Chiao Tung University
  

• T3-22 Analysis of Racetrack-Coupled Mach Zehnder Interferometer for High-Speed Communication
  

  Kai-Ning Ku¹, Po-Chih Chang¹, Chung-Chih Wang¹, Chen-Yu Lin¹, Chi-Hsiang Hsu¹, Ting-Hui Chen¹, Chien-Ying Huang¹, Sin-Jhu Wun¹, Chi-Sen Lee¹,Shang-Chun Chen¹, Ming-Chang Lee^1,2, Chien-Chung Lin^1,3, Chih-I Wu^{1,4
  1}Industrial Technology Research Institute
  ²Institute of Photonics Technologies, National Tsing-Hua University
  ³Institute of Photonic System, College of Photonics, National Chiao Tung University
  ⁴Graduate Institute of Photonics and Optoelectronics, National Taiwan University
  

• T3-23 Giant Electroresistance Switching of Two-dimensional Ferroelectric α-In₂Se₃ on p⁺-Si
  

  Ko-Chun Lee^1,2, José Ramón Durán Retamal¹, Fei Xue³, Bin Cheng¹, Hao-Ling Tang³, Ming-Hui Chiu³, Wei-Jin Hu⁴, Chih-I Wu⁵, Mei-Hsin Chen⁶, Lain-Jong Li⁷, Chen-Hsin Lien², Jr-Hau He^{1
  1}King Abdullah University of Science and Technology, Thuwal
  ²National Tsing Hua University
  ³Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal
  ⁴Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, China
  ⁵National Taiwan University
  ⁶National Taipei University of Technology
  ⁷University of New South Wales

• T3-24 A Novel 1T DRAM with Shell/Core Dual-Gate Architecture
  

  Md. Hasan Raza Ansari, Seongjae Cho
  Gachon University
  

---

Tuesday, August 11, 1:30 PM~3:10 PM Mezzanine A+B

T4 ： Ferroelectric and Steep Slope Transistor

• 1:30 PM~1:50 PM

  T4-1 Ab Initio Study on Tuning the Ferroelectricity of Orthorhombic HfO₂
  

  Sheng-Ting Fan¹,Yun-Wen Chen¹,Pin-Shiang Chen¹, C. W. Liu,¹²

  ¹Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan

  ²Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan

• 1:50 PM~2:10 PM

  T4-2 DFT Models of Negative Capacitance
  

  Kisung Chae¹², Kyeongjae Cho², Andrew Kummel¹

  ¹University of California, San Diego
  ²University of Texas at Dallas

• 2:10 PM~2:30 PM

  T4-3 Importance of Extremely Small Polarization Charge on Ferroelectric-Gate Steep-Slope Transistors
  

  Shinji Migita, Second:Hiroyuki Ota, Shutaro Asanuma, Yuta Saito, Yukinori Morita

  AIST

• 2:30 PM~2:50 PM

  T4-4 Analysis of Steep SS Mechanism on PN-Body Tied SOI-FET with 65 nm Thin Box FD-SOI
  

  Takayuki Mori, Jiro Ida, Keita Daimatsu

  Kanazawa Institute of Technology

• 2:50 PM~3:10 PM

  T4-5 Ferroelectric Hf_0.5Zr_0.5O₂ p-type Ge Nanowire GAAFET with Junctionless and Inversion mode
  

  Yung-Chun Wu¹, Yu-Chen Tsai¹, Yu-Ning Chen¹, Meng-Ju Tsai¹, Chong Jhe Sun¹, Siao-Cheng Yan¹, Hao-Hsiang Chang¹, Tzu-Ming Chu¹, Chieng-Chung Hsu¹, Fu-Ju Hou^{2
  1}National Tsing Hua University, Hsinchu
  ²Taiwan Semiconductor Research Institute
  
  

  
  

---

Tuesday, August 11, 3:30 PM~5:10 PM Mezzanine A+B

T5 ： Processing

• 3:30 PM~3:50 PM

  T5-1 Infrared Response of Stacked GeSn Transistors
  

  Hsiao-Hsuan Liu, Yu-Shiang Huang, Fang-Liang Lu, Hung-Yu Ye, C. W. Liu

  National Taiwan University

• 3:50 PM~4:10 PM

  T5-2 Improving Interface State Density of TiN/HfO2/IL Gate Stack on Si_0.5Ge_0.5 by Optimization of Post Metallization Annealing and Oxygen Pressure
  

  Meng-Chien Lee, National Chiao Tung University
  

• 4:10 PM~4:30 PM

  T5-3 Fabrication and device characterization of large linear dynamic range tunnel magnetoresistance (TMR) sensors for system applications
  

  Fang-Ming Chen¹, I-Jung Wang¹, Ding-Yeong Wang¹, Shan-Yi Yang¹, Yu-Chen Hsin¹, Yao-Jen Chang¹, Hsin-Han Lee¹, Guan-Long Chen¹, Yi-Ching Kuo¹, Yi-Hui Su¹, Sk. Ziaur Rahaman¹, Jeng-Hua Wei¹, Sih-Han Li¹, Shyh-Shyuan Sheu¹, Wei-Chung Lo¹, Shih-Chieh Chang¹, Chih-I Wu^1,2,3

  ¹Industrial Technology Research Institute
  ²Graduated Institute of Photonics and Optoelectronics, National Taiwan University
  ³Department of Electrical Engineering, National Taiwan University

• 4:30 PM~4:50 PM

  T5-4 600 meV Effective Work Function Tuning by Sputtered WN_x Films
  

  Chung-En Tsai, Chih-Hsiung Huang, Yu-Rui Chen, Chien-Te Tu, Yu-Shiang Huang, C. W. Liu

  National Taiwan University

• 4:50 PM~5:10 PM

  T5-5 High Performance GaN HEMT and Ge Fin FET Device Realizing by Atomic-layer Defect-free Etching with Chlorine Neutral Beam
  

  Daisuke Ohori^1,2,3, Niraj Man Shrestha^1,3, Yiming Li^1,3, Jenn-Hwan Tarng^1,3, Seiji Samukawa^{1-5
  1}Department of Electrical and Computer Engineering, National Chiao Tung University
  ²Institute of Fluid Science, Tohoku University
  ³Center for mmWave Smart Radar System and Technologies, National Chiao Tung University
  ⁴National Institute of Advanced Industrial Science and Technology (AIST)
  ⁵Advanced Institute for Materials Research, Tohoku University
  

• 5:10 PM~5:30 PM

  T5-6 Deposition of High Thermal Conductivity AlN Heat Spreader Films
  

  Scott T. Ueda¹, Aaron McLeod¹, Michelle Chen², Chris Perez², Eric Pop², Dan Alvarez³, Andrew C. Kummel^{1
  1}University of California, San Diego
  ²Stanford University
  ³RASIRC, USA
  

---

Wednesday, August 12, 10:20 AM~12:00 PM Ballroom C

T8 ： Advanced Transistors for Digital and Analog/RF Applications

• 10:20 AM~10:55 AM

  T8-1 Investigation of the Impact of Internal Metal Gate — From MFM Capacitors to Two-Layer-Stacked GAA Poly-Si NW FE-FETs
  

  Shen-Yang Lee, Han-Wei Chen, Chun-Chih Chung, Chiuan-Huei Shen, Po-Yi Kuo, Yu-En Huang, Hsin-Yu Chen, Tien-Sheng Chao

  National Chiao Tung University

• 10:40 AM~11:00 AM

  T8-2 Comparative Experimental Study of Junctionless and Inversion-Mode Nanowire Transistors for Analog Applications
  

  D. Bosch¹², J.P. Colinge¹, J. Lugo¹, A. Tataridou², C. Theodorou², X. Garros¹, S. Barraud¹, J. Lacord¹, B. Sklenard¹, M. Casse¹, L. Brunet¹, P. Batude¹, C. Fenouillet-Beranger¹, D. Lattard¹, J. Cluzel¹, F. Allain¹, R. Nait Youcef¹, J. M. Hartmann¹, C. Vizioz¹, G. Audoit¹, F. Balestra², F. Andrieu¹

  ¹CEA-LETI
  ²IMEP-LAHC 

• 11:00 AM~11:20 AM

  T8-3 Stacked Ge Nanosheet GAAFETs Fabrication and Strain Effects Measurement
  

  Chun-Lin Chu, Guang-Li Luo, Kehuey Wu, Shih-Hong Chen, 
  Bo-Yuan Chen, Wen-Fa Wu, Wen-Kuan Yeh
  Taiwan Semiconductor Research Institute
  

• 11:20 AM~11:40 AM

  T8-4 Quaternary Barrier AlInGaN/GaN-on-Si High Electron Mobility Transistor with Record F_T-L_g Product of 13.9 GHz-μm
  

  Po-Tsung Tu¹, Indraneel Sanyal², Po-Chun Yeh¹, Heng-Yuan Lee¹, Li-Heng Lee¹, Chih-I Wu^1,3,4, Jen-Inn Chyi^{2
  1}Industrial Technology Research Institute
  ²National Central University
  ³Graduated Institute of  Photonics and Optoelectronics, National Taiwan University
  ⁴Department of Electrical Engineering, National Taiwan University
  

• 11:40 AM~12:00 PM

  T8-5 Design of Low Voltage Vertical Channel Face-tunneling TFET Using Ge/SiGe Materials and Its SRAM Circuit Performance
  

  A. Gupta, C, K, Chiang, W. Y. Yang, E R Hsieh, Steve S. Chung
  National Chiao Tung University
  

---

Thursday, August 13, 10:20 AM~12:00 PM Ballroom B

T11 ： Analog & AI

• 10:20 AM~10:40 AM

  T11-1 Stochastic STT-MRAM Spiking Neuron Circuit
  

  Fu-Xiang Liang¹, Paritosh Sahu¹, Ming-Hung Wu¹, Jeng-Hua Wei², Shyh-Shyuan Sheu², Tuo-Hung Hou^{12
  1}National Chiao Tung University
  ²Industrial Technology Research Institute
  

• 10:40 AM~11:00 AM

  T11-2 MRAM Acceleration Core for Vector Matrix Multiplication and XNOR-Binarized Neural Network Inference
  

  Shifan Gao, Bing Chen, Yiming Qu, Yi Zhao
  Zhejiang University
  

• 11:00 AM~11:20 AM

  T11-3 Low Temperature High Voltage Analog Devices in a 3D Sequential Integration
  

  C. CAVALCANTE^1,3, X. Garros¹, P. Batude¹, A. Tataridou²,
  J. Lacord¹, M. Casse¹, C. Theodorou², T. Karatsori,IMEP-LAHC², R. Gassilloud¹, C. Fenouillet-Beranger¹, L. Brunet¹, O. Rozeau¹, N. Rambal¹, F. Gaillard¹, F. Ponthenier¹, F. Allain¹, G. Romano^1,4, G. Ghibaudo², J.P. Colinge¹, M. Vinet¹, F. Andrieu^{1
  1}CEA LETI
  ²IMEP-LAHC
  ³Université Grenoble Alpes
  ⁴STMicroelectronics
  

• 11:20 AM~11:40 AM

  T11-4 Gradual Resistive Switching in Electron Beam Irradiated ReS₂ Transistor and its Application as Electronic Synapse
  

  Sifan Li, Bochang Li, Xuewei Feng, Li Chen, Yesheng Li, Li Huang, Xiao Gong, Xuanyao Fong, Kah-Wee Ang
  National University of Singapore
  

---

PAGE CONTENTS

• -T1 :
   RRAM Technology
• -T3 :
   Poster Session
• -T4 :
   Ferroelectric and Steep Slope Transistor
• -T5 :
   Processing
• -T8 :
   Advanced Transistors for Digital and Analog/RF Applications
• -T11 :
   Analog & AI