T1 ： Contacts & Interconnects

1:30 PM~3:10 PM,Tuesday , April 17 Ballroom A

T1-1 Applications of 2D Materials in Interconnect Technology (Invited Talk)

1:30 PM~2:05 PM,Tuesday , April 17

Zhi-Hong Chen
Purdue University, USA
T1-2 Novel Solutions to Enable Contact Resistivity <1E-9 ohms-cm2 for 5nm Node and Beyond

2:05 PM~2:25 PM,Tuesday , April 17

Raymond Hung, Fareen Adeni Khaja, Kelly E Hollar, KV Rao, Samuel Munnangi, Yongmei Chen, Motoya Okazaki, Yi-Chiau Huang, Xuebin Li, Hua Chung, Osbert Chan, Christopher Lazik, Miao Jin, Hongwen Zhou, Abhilash Mayur, Namsung Kim and Ellie Yieh
Applied Materials, USA
T1-3 BEOL Compatible Sub-nm Diffusion Barrier for Advanced Cu Interconnects

2:25 PM~2:45 PM,Tuesday , April 17

Chun-Li Lo, Kehao Zhang*, Joshua A. Robinson* and Zhihong Chen
Purdue University, USA
*The Pennsylvania State University, USA
T1-4 ZnON Contacts Enabling High-performance 3-D InGaZnO Inverters

2:45 PM~3:05 PM,Tuesday , April 17

Chin-I Kuan, Kang-Ping Peng, Horng-Chih Lin and Pei-Wen Li
National Chiao Tung University, Taiwan

T3 ： Poster Session

5:30 PM~6:30 PM,Tuesday , April 17 Ballroom C

T3-1 Temperature Effect on Operations and Characteristics of p-channel FinFET Dielectric RRAM

5:30 PM~6:30 PM,Tuesday , April 17

Jen Chieh Kuo, Ya-Chin King and Chrong-Jung Lin
National Tsing Hua University, Taiwan
T3-2 Temperature and Stress Effect of Random Telegraph Noise in FIND RRAM Arrays

5:30 PM~6:30 PM,Tuesday , April 17

Chin Yuan Chen, Chrong Jung Lin and Ya-Chin King
National Tsing Hua University, Taiwan
T3-3 Electrical characteristics of gate-all-around MOSFET ring oscillators using TCAD simulation

5:30 PM~6:30 PM,Tuesday , April 17

Sutae Kim, Minsuk Kim, Sola Woo, Hyungu Kang and Sangsig Kim
Korea University, South Korea
Samsung Electronics, South Korea
T3-4 Interface Discrete Trap Induced Variability for Negative Capacitance FinFETs

5:30 PM~6:30 PM,Tuesday , April 17

Ho-Pei Lee, Kuei-Yang Tseng and Pin Su
National Chiao-Tung University, Taiwan
T3-5 Glassy-Electret Random Access Memory – A naturally Nanoscale Memory Concept

5:30 PM~6:30 PM,Tuesday , April 17

Vasileia Georgiou*, Jason P. Campbell, Pragya R. Shrestha**, Dimitris E. Ioannou* and Kin P. Cheung
National Institute of Standards and Technology, USA
*George Mason University, USA
**Theiss Research, USA
T3-6 Accurate Self-heating Assessment Employing Multi-stage Thermal RC Network

5:30 PM~6:30 PM,Tuesday , April 17

Wangyong Chen, Linlin Cai, Kunliang Wang, Xing Zhang*, Xiaoyan Liu and Gang Du
Peking University, China
*National Key Laboratory of Science and Technology on Micro/Nano Fabrication, China
T3-7 TaOx/HfO2-Based RRAM with Self-Selective Feature Caused by Current Compliance Modulation

5:30 PM~6:30 PM,Tuesday , April 17

Yue Xi, Huaqiang Wu, Bin Gao, Xinyi Li, Wei Wu, Dong Wu, Ning Deng and He Qian
Tsinghua University, China
T3-8 Evaluation of Circuit Performance Degradation due to CNT Process Imperfection

5:30 PM~6:30 PM,Tuesday , April 17

Kaship Sheikh and Lan Wei
University of Waterloo, Canada
T3-9 Steep Slope 2D Strain Field Effect Transistor: 2D-SFET

5:30 PM~6:30 PM,Tuesday , April 17

Daniel Schulman, Andrew Arnold and Saptarshi Das
The Pennsylvania State University, USA
T3-10 Carrier Conduction in SiO2/GaN Structure with Abrupt Interface

5:30 PM~6:30 PM,Tuesday , April 17

Nguyen Xuan Truyen*, Noriyuki Taoka*, Akio Ohta, Hisashi Yamada*, Tokio Takahashi*, Mitsuhisa Ikeda, Katsunori Makihara, Mitsuaki Shimizu* and Seiichi Miyazaki
Graduate School of Engineering, Nagoya University, Japan
*GaN-OIL, National Institute of Advanced Industrial Science and Technology, Japan
T3-11 A New and Simple DC Method for Thermal-Resistance Extraction of Scaled FinFET Devices

5:30 PM~6:30 PM,Tuesday , April 17

Wei-Cheng Huang and Pin Su
National Chiao Tung University, Taiwan
T3-12 Modeling of SOI uniformity impact on silicon photonic grating coupler performance compared to other process variation sources

5:30 PM~6:30 PM,Tuesday , April 17

Gweltaz Gaudin, Daivid Fowler *, Céline Cailler and Arnaud Rigny
Soitec Bernin, France
*CEA LETI, France

T4 ： Novel Devices

10:20 AM~12:35 PM,Wednesday , April 18 Ballroom A

T4-1 From Charge Spin Logic to Probabilistic Spin Logic – An Experimental Approach(Invited Talk)

10:20 AM~10:55 AM,Wednesday , April 18

Joerg Appenzeller
Purdue University, USA
T4-2 Steep slope 2D negative capacitance CMOS devices: MoS2 and WSe2

10:55 AM~11:15 AM,Wednesday , April 18

Mengwei Si and Peide D. Ye
Purdue University, USA
T4-3 Investigation of the Abrupt Phase Transition in 1T-TaS2/MoS2 Heterostructures

11:15 AM~11:35 AM,Wednesday , April 18

Benjamin Grisafe, Rui Zhao*, Matthew Jerry, Joshua A. Robinson* and Suman Datta
University of Notre Dame, USA
*The Pennsylvania State University, USA
T4-4 A New High Voltage IC with Robust Isolation Design

11:35 AM~11:55 AM,Wednesday , April 18

Vivek Ningaraju*, Horng-Chih Lin, Po-An Chen* and Jiin-Shiarng Wen*
National Chiao Tung University, Taiwan
*Nuvoton Technology Corporation, Taiwan
T4-5 Modeling of GaN HEMTs on Silicon with Trapping and Self-heating Effects for RF Applications

11:55 AM~12:15 PM,Wednesday , April 18

Chuan-Wei Tsou, Po-Tsung Tu, Kan-Hsueh Tsai, Po-Chun Yeh, Heng-Yuan Lee, Li-Heng Lee and Shawn S. H. Hsu*
Industrial Technology Research Institute, Taiwan
*National Tsing Hua University, Taiwan
T4-6 All Optical NOR Gate via Tunnel-Junction Transistor Lasers for High Speed Optical Logic Processors

12:15 PM~12:35 PM,Wednesday , April 18

Milton Feng, Ardy Winoto, Junyi Qiu, Yu-Ting Peng and Nick Holonyak, Jr.
University of Illinois, USA

T6 ： RRAM

10:20 AM~12:20 PM,Wednesday , April 18 Ballroom C

T6-1 Excellent High Temperature Retention of TiOxNy ReRAM by Interfacial Layer Engineering

10:20 AM~10:40 AM,Wednesday , April 18

Yu-Hsuan Lin*, Dai-Ying Lee, Chao-Hung Wang, Ming-Hsiu Lee, Yung-Han Ho, Erh-Kun Lai, Kuang-Hao Chiang, Hsiang-Lan Lung, Keh-Chung Wang, Tseung-Yuen Tseng* and Chih-Yuan Lu
Macronix International Co., Ltd., Taiwan
*National Chiao Tung University, Taiwan
T6-2 A Novel ReWritable One-Time-Programming OTP (RW-OTP) Realized by Dielectric-fuse RRAM Devices Featuring Ultra-High Reliable Retention and Good Endurance for Embedded Applications

10:40 AM~11:00 AM,Wednesday , April 18

H.W. Cheng, E. R. Hsieh, Z. H. Huang, C. H. Chuang, C. H. Chen, F. L. Li*, Y. M. Lo*, C. H. Liu* and Steve S. Chung
National Chiao Tung University, Taiwan
*National Taiwan Normal University, Taiwan
T6-3 Synaptic Properties Considering Temperature Effect in HfOx-Based Memristor – Demonstration of Homo-thermal Synaptic Behaviors

11:00 AM~11:20 AM,Wednesday , April 18

Jia-Chen*, Sungjun Kim, Ying-Chen Chen**, Min-Hwi Kim, Yi Li*, Xiang-Shui Miao*, Yao-Feng Chang#, Byung-Gook Park and Jack C. Lee**
Seoul National University, South Korea
*Huazhong University of Science and Technology, China
**The University of Texas at Austin, USA
#Micron Technology Inc, USA
T6-4 A Novel RRAM-based Adaptive-Threshold LIF Neuron Circuit for High Recognition Accuracy

11:20 AM~11:40 AM,Wednesday , April 18

Xinxin Wang, Peng Huang, Zhen Dong, Zheng Zhou, Yuning Jiang, Runze Han, Lifeng Liu, Xiaoyan Liu and Jinfeng Kang
Peking University, China
T6-5 Enhanced Performance of Ag-filament Threshold Switching Selector by Rapid Thermal Processing

11:40 AM~12:00 PM,Wednesday , April 18

Qilin Hua, Huaqiang Wu, Bin Gao and He Qian
Tsinghua University, China
T6-6 Statistical analysis of CBRAM endurance

12:00 PM~12:20 PM,Wednesday , April 18

D. Alfaro Robayo*, C. Nail, G. Sassine, J. F. Nodin, M. Bernard, Q. Raffay*, G. Ghibaudo*, G. Molas and E. Nowak
CEA LETI Minatec Campus, France
*IMEP LAHC CNRS, France

T7 ： Memory

1:30 PM~3:10 PM,Wednesday , April 18 Ballroom A

T7-1 P-STT-MRAM Thermal stability and modeling of its temperature dependence

1:30 PM~1:50 PM,Wednesday , April 18

L. Tillie*, B. Dieny*, R. C. Sousa*, J. Chatterjee* , S. Auffret*, N. Lamard*, J. Guelffucci*, E. Nowak and I.L. Prejbeanu
CEA-LETI, Minatec Campus, France
*SPINTEC, Univ., France
T7-2 RTN Modulation by Neighboring Word-Line Vt Level in 1Xnm Floating Gate NAND Strings

1:50 PM~2:10 PM,Wednesday , April 18

C.C.Cheng, Y.H. Chen, C.P. Wang, C.H. Cheng, C.W. Lee, T.W. Lin, S.H. Ku, Y.W. Chang, W.J. Tsai, T.C. Lu, K.C. Chen, Tahui Wang and Chih-Yuan Lu
Macronix International Company Ltd., Taiwan
T7-3 A new method for test chip and single 40nm NOR Flash cell electrical parameters correlation using a CAST structure

2:10 PM~2:30 PM,Wednesday , April 18

T. Kempf*,**, V. Della Marca*, P. Canet*, A. Regnier, P. Masson** and J.-M. Portal*
STMicroelectronics, France
*Aix-Marseille University, France
**Nice Sophia-Antipolis University, France
T7-4 Novel IrOx/SiO2/W cross-point memory for Lysyl-oxidase-like-2 (LOXL2) breast cancer biomarker detection

2:30 PM~2:50 PM,Wednesday , April 18

S. Jana, S. Samanta, S. Roy, J. T. Qiu* and S. Maikap*
Chang Gung University, Taiwan
*Chang Gung Memorial Hospital, Taiwan
T7-5 Prostate cancer biomarker detection by using Si nanowire based electrolyte/NiOx/SiO2/n-Si sensors

2:50 PM~3:10 PM,Wednesday , April 18

Anisha Roy, Jian-Tai Qiu* and Siddheswar Maikap*
Chang Gung University, Taiwan
*Chang Gung Memorial Hospital, Taiwan

T10 ： Conventional Devices

10:20 AM~12:20 PM,Thursday , April 19 Ballroom B

T10-1 Damageless and Conformal Doping for FinFETs by Spin-Coated Phosphorus Doped Silica

10:20 AM~10:40 AM,Thursday , April 19

Takashi Matsukawa, Takahiro Mori, Yoshihiro Sawada*, Yohei Kinoshita*, Yongxun Liu and Meishoku Masahara
National Institute of Advanced Industrial Science and Technology, Japan
*Tokyo Ohka Kogyo Co., Ltd., Japan
T10-2 Investigation of Self-Heating Effect on Stacked Nanosheet GAA Transistors

10:40 AM~11:00 AM,Thursday , April 19

Linlin Cai, Wangyong Chen, Gang Du, Jinfeng Kang, Xing Zhang* and Xiaoyan Liu
Peking University, China
*National Key Laboratory of Science and Technology on Micro/Nano Fabrication, China
T10-3 HEtero-Layer-Lift-Off (HELLO) technology for enhanced hole mobility in UTB GeOI pMOSFETs

11:00 AM~11:20 AM,Thursday , April 19

Wen Hsin Chang, Toshifumi Irisawa, Hiroyuki Ishii, Hiroyuki Hattori, Noriyuki Uchida and Tatsuro Maeda
National Institute of Advanced Industrial Science and Technology, Japan
T10-4 Impact of Ge Oxidation States in GeOx Interfacial Layer on Electrical Characteristics of Ge pMOSFETs

11:20 AM~11:40 AM,Thursday , April 19

Shih-Han Yi, Kuei-Shu Chang-Liao, Chia-Wei Hsu, Jiayi Huang and Tzung-Yu Wu
National Tsing Hua University, Taiwan
T10-5 Mobility Calculation of Ge Nanowire Junctionless NFETs with Size and Geometry Dependence

11:40 AM~12:00 PM,Thursday , April 19

Hung-Yu Ye, Chia-Che Chung, I-Hsieh Wong, Huang-Siang Lan and C. W. Liu*
National Taiwan University, Taiwan
*National Nano Device Laboratories, Taiwan
T10-6 UTBSOI MOSFET with Corner Spacers for Energy-Efficient Applications

12:00 PM~12:20 PM,Thursday , April 19

Angada B. Sachid and Chenming Hu
University of California Berkeley, USA

Top

T1 ： Contacts & Interconnects

Zhi-Hong ChenPurdue University, USA

Raymond Hung, Fareen Adeni Khaja, Kelly E Hollar, KV Rao, Samuel Munnangi, Yongmei Chen, Motoya Okazaki, Yi-Chiau Huang, Xuebin Li, Hua Chung, Osbert Chan, Christopher Lazik, Miao Jin, Hongwen Zhou, Abhilash Mayur, Namsung Kim and Ellie YiehApplied Materials, USA

Chun-Li Lo, Kehao Zhang*, Joshua A. Robinson* and Zhihong Chen Purdue University, USA*The Pennsylvania State University, USA

Chin-I Kuan, Kang-Ping Peng, Horng-Chih Lin and Pei-Wen LiNational Chiao Tung University, Taiwan

T3 ： Poster Session

Jen Chieh Kuo, Ya-Chin King and Chrong-Jung LinNational Tsing Hua University, Taiwan

Chin Yuan Chen, Chrong Jung Lin and Ya-Chin KingNational Tsing Hua University, Taiwan

Sutae Kim, Minsuk Kim, Sola Woo, Hyungu Kang and Sangsig KimKorea University, South KoreaSamsung Electronics, South Korea

Ho-Pei Lee, Kuei-Yang Tseng and Pin SuNational Chiao-Tung University, Taiwan

Vasileia Georgiou*, Jason P. Campbell, Pragya R. Shrestha**, Dimitris E. Ioannou* and Kin P. CheungNational Institute of Standards and Technology, USA*George Mason University, USA**Theiss Research, USA

Wangyong Chen, Linlin Cai, Kunliang Wang, Xing Zhang*, Xiaoyan Liu and Gang DuPeking University, China*National Key Laboratory of Science and Technology on Micro/Nano Fabrication, China

Yue Xi, Huaqiang Wu, Bin Gao, Xinyi Li, Wei Wu, Dong Wu, Ning Deng and He QianTsinghua University, China

Kaship Sheikh and Lan WeiUniversity of Waterloo, Canada

Daniel Schulman, Andrew Arnold and Saptarshi DasThe Pennsylvania State University, USA

Nguyen Xuan Truyen*, Noriyuki Taoka*, Akio Ohta, Hisashi Yamada*, Tokio Takahashi*, Mitsuhisa Ikeda, Katsunori Makihara, Mitsuaki Shimizu* and Seiichi MiyazakiGraduate School of Engineering, Nagoya University, Japan*GaN-OIL, National Institute of Advanced Industrial Science and Technology, Japan

Wei-Cheng Huang and Pin SuNational Chiao Tung University, Taiwan

Gweltaz Gaudin, Daivid Fowler *, Céline Cailler and Arnaud RignySoitec Bernin, France*CEA LETI, France

T4 ： Novel Devices

Joerg AppenzellerPurdue University, USA

Mengwei Si and Peide D. YePurdue University, USA

Benjamin Grisafe, Rui Zhao*, Matthew Jerry, Joshua A. Robinson* and Suman DattaUniversity of Notre Dame, USA*The Pennsylvania State University, USA

Vivek Ningaraju*, Horng-Chih Lin, Po-An Chen* and Jiin-Shiarng Wen*National Chiao Tung University, Taiwan*Nuvoton Technology Corporation, Taiwan

Chuan-Wei Tsou, Po-Tsung Tu, Kan-Hsueh Tsai, Po-Chun Yeh, Heng-Yuan Lee, Li-Heng Lee and Shawn S. H. Hsu*Industrial Technology Research Institute, Taiwan*National Tsing Hua University, Taiwan

Milton Feng, Ardy Winoto, Junyi Qiu, Yu-Ting Peng and Nick Holonyak, Jr.University of Illinois, USA

T6 ： RRAM

Yu-Hsuan Lin*, Dai-Ying Lee, Chao-Hung Wang, Ming-Hsiu Lee, Yung-Han Ho, Erh-Kun Lai, Kuang-Hao Chiang, Hsiang-Lan Lung, Keh-Chung Wang, Tseung-Yuen Tseng* and Chih-Yuan LuMacronix International Co., Ltd., Taiwan*National Chiao Tung University, Taiwan

H.W. Cheng, E. R. Hsieh, Z. H. Huang, C. H. Chuang, C. H. Chen, F. L. Li*, Y. M. Lo*, C. H. Liu* and Steve S. ChungNational Chiao Tung University, Taiwan*National Taiwan Normal University, Taiwan

Jia-Chen*, Sungjun Kim, Ying-Chen Chen**, Min-Hwi Kim, Yi Li*, Xiang-Shui Miao*, Yao-Feng Chang#, Byung-Gook Park and Jack C. Lee**Seoul National University, South Korea*Huazhong University of Science and Technology, China**The University of Texas at Austin, USA#Micron Technology Inc, USA

Xinxin Wang, Peng Huang, Zhen Dong, Zheng Zhou, Yuning Jiang, Runze Han, Lifeng Liu, Xiaoyan Liu and Jinfeng KangPeking University, China

Qilin Hua, Huaqiang Wu, Bin Gao and He QianTsinghua University, China

D. Alfaro Robayo*, C. Nail, G. Sassine, J. F. Nodin, M. Bernard, Q. Raffay*, G. Ghibaudo*, G. Molas and E. NowakCEA LETI Minatec Campus, France*IMEP LAHC CNRS, France

T7 ： Memory

L. Tillie*, B. Dieny*, R. C. Sousa*, J. Chatterjee* , S. Auffret*, N. Lamard*, J. Guelffucci*, E. Nowak and I.L. PrejbeanuCEA-LETI, Minatec Campus, France*SPINTEC, Univ., France

C.C.Cheng, Y.H. Chen, C.P. Wang, C.H. Cheng, C.W. Lee, T.W. Lin, S.H. Ku, Y.W. Chang, W.J. Tsai, T.C. Lu, K.C. Chen, Tahui Wang and Chih-Yuan LuMacronix International Company Ltd., Taiwan

T. Kempf*,**, V. Della Marca*, P. Canet*, A. Regnier, P. Masson** and J.-M. Portal*STMicroelectronics, France *Aix-Marseille University, France **Nice Sophia-Antipolis University, France

S. Jana, S. Samanta, S. Roy, J. T. Qiu* and S. Maikap*Chang Gung University, Taiwan*Chang Gung Memorial Hospital, Taiwan

Anisha Roy, Jian-Tai Qiu* and Siddheswar Maikap*Chang Gung University, Taiwan*Chang Gung Memorial Hospital, Taiwan

T10 ： Conventional Devices

Takashi Matsukawa, Takahiro Mori, Yoshihiro Sawada*, Yohei Kinoshita*, Yongxun Liu and Meishoku MasaharaNational Institute of Advanced Industrial Science and Technology, Japan*Tokyo Ohka Kogyo Co., Ltd., Japan

Linlin Cai, Wangyong Chen, Gang Du, Jinfeng Kang, Xing Zhang* and Xiaoyan LiuPeking University, China*National Key Laboratory of Science and Technology on Micro/Nano Fabrication, China

Wen Hsin Chang, Toshifumi Irisawa, Hiroyuki Ishii, Hiroyuki Hattori, Noriyuki Uchida and Tatsuro MaedaNational Institute of Advanced Industrial Science and Technology, Japan

Shih-Han Yi, Kuei-Shu Chang-Liao, Chia-Wei Hsu, Jiayi Huang and Tzung-Yu WuNational Tsing Hua University, Taiwan

Hung-Yu Ye, Chia-Che Chung, I-Hsieh Wong, Huang-Siang Lan and C. W. Liu*National Taiwan University, Taiwan*National Nano Device Laboratories, Taiwan

Angada B. Sachid and Chenming HuUniversity of California Berkeley, USA

PAGE CONTENTS

Zhi-Hong Chen
Purdue University, USA

Raymond Hung, Fareen Adeni Khaja, Kelly E Hollar, KV Rao, Samuel Munnangi, Yongmei Chen, Motoya Okazaki, Yi-Chiau Huang, Xuebin Li, Hua Chung, Osbert Chan, Christopher Lazik, Miao Jin, Hongwen Zhou, Abhilash Mayur, Namsung Kim and Ellie Yieh
Applied Materials, USA

Chun-Li Lo, Kehao Zhang, Joshua A. Robinson and Zhihong Chen
Purdue University, USA
*The Pennsylvania State University, USA

Chin-I Kuan, Kang-Ping Peng, Horng-Chih Lin and Pei-Wen Li
National Chiao Tung University, Taiwan

Jen Chieh Kuo, Ya-Chin King and Chrong-Jung Lin
National Tsing Hua University, Taiwan

Chin Yuan Chen, Chrong Jung Lin and Ya-Chin King
National Tsing Hua University, Taiwan

Sutae Kim, Minsuk Kim, Sola Woo, Hyungu Kang and Sangsig Kim
Korea University, South Korea
Samsung Electronics, South Korea

Ho-Pei Lee, Kuei-Yang Tseng and Pin Su
National Chiao-Tung University, Taiwan

Vasileia Georgiou*, Jason P. Campbell, Pragya R. Shrestha**, Dimitris E. Ioannou* and Kin P. Cheung
National Institute of Standards and Technology, USA
*George Mason University, USA
**Theiss Research, USA

Wangyong Chen, Linlin Cai, Kunliang Wang, Xing Zhang, Xiaoyan Liu and Gang Du
Peking University, China
National Key Laboratory of Science and Technology on Micro/Nano Fabrication, China

Yue Xi, Huaqiang Wu, Bin Gao, Xinyi Li, Wei Wu, Dong Wu, Ning Deng and He Qian
Tsinghua University, China

Kaship Sheikh and Lan Wei
University of Waterloo, Canada

Daniel Schulman, Andrew Arnold and Saptarshi Das
The Pennsylvania State University, USA

Nguyen Xuan Truyen, Noriyuki Taoka, Akio Ohta, Hisashi Yamada, Tokio Takahashi, Mitsuhisa Ikeda, Katsunori Makihara, Mitsuaki Shimizu* and Seiichi Miyazaki
Graduate School of Engineering, Nagoya University, Japan
*GaN-OIL, National Institute of Advanced Industrial Science and Technology, Japan

Wei-Cheng Huang and Pin Su
National Chiao Tung University, Taiwan

Gweltaz Gaudin, Daivid Fowler , Céline Cailler and Arnaud Rigny
Soitec Bernin, France
CEA LETI, France

Joerg Appenzeller
Purdue University, USA

Mengwei Si and Peide D. Ye
Purdue University, USA

Benjamin Grisafe, Rui Zhao, Matthew Jerry, Joshua A. Robinson and Suman Datta
University of Notre Dame, USA
*The Pennsylvania State University, USA

Vivek Ningaraju, Horng-Chih Lin, Po-An Chen and Jiin-Shiarng Wen*
National Chiao Tung University, Taiwan
*Nuvoton Technology Corporation, Taiwan

Chuan-Wei Tsou, Po-Tsung Tu, Kan-Hsueh Tsai, Po-Chun Yeh, Heng-Yuan Lee, Li-Heng Lee and Shawn S. H. Hsu*
Industrial Technology Research Institute, Taiwan
*National Tsing Hua University, Taiwan

Milton Feng, Ardy Winoto, Junyi Qiu, Yu-Ting Peng and Nick Holonyak, Jr.
University of Illinois, USA

Yu-Hsuan Lin, Dai-Ying Lee, Chao-Hung Wang, Ming-Hsiu Lee, Yung-Han Ho, Erh-Kun Lai, Kuang-Hao Chiang, Hsiang-Lan Lung, Keh-Chung Wang, Tseung-Yuen Tseng and Chih-Yuan Lu
Macronix International Co., Ltd., Taiwan
*National Chiao Tung University, Taiwan

H.W. Cheng, E. R. Hsieh, Z. H. Huang, C. H. Chuang, C. H. Chen, F. L. Li, Y. M. Lo, C. H. Liu* and Steve S. Chung
National Chiao Tung University, Taiwan
*National Taiwan Normal University, Taiwan

Jia-Chen*, Sungjun Kim, Ying-Chen Chen**, Min-Hwi Kim, Yi Li, Xiang-Shui Miao, Yao-Feng Chang#, Byung-Gook Park and Jack C. Lee**
Seoul National University, South Korea
*Huazhong University of Science and Technology, China
**The University of Texas at Austin, USA
#Micron Technology Inc, USA

Xinxin Wang, Peng Huang, Zhen Dong, Zheng Zhou, Yuning Jiang, Runze Han, Lifeng Liu, Xiaoyan Liu and Jinfeng Kang
Peking University, China

Qilin Hua, Huaqiang Wu, Bin Gao and He Qian
Tsinghua University, China

D. Alfaro Robayo, C. Nail, G. Sassine, J. F. Nodin, M. Bernard, Q. Raffay, G. Ghibaudo, G. Molas and E. Nowak
CEA LETI Minatec Campus, France
IMEP LAHC CNRS, France

L. Tillie, B. Dieny, R. C. Sousa, J. Chatterjee , S. Auffret, N. Lamard, J. Guelffucci, E. Nowak and I.L. Prejbeanu
CEA-LETI, Minatec Campus, France
SPINTEC, Univ., France

C.C.Cheng, Y.H. Chen, C.P. Wang, C.H. Cheng, C.W. Lee, T.W. Lin, S.H. Ku, Y.W. Chang, W.J. Tsai, T.C. Lu, K.C. Chen, Tahui Wang and Chih-Yuan Lu
Macronix International Company Ltd., Taiwan

T. Kempf*,**, V. Della Marca, P. Canet, A. Regnier, P. Masson** and J.-M. Portal*
STMicroelectronics, France
*Aix-Marseille University, France
**Nice Sophia-Antipolis University, France

S. Jana, S. Samanta, S. Roy, J. T. Qiu* and S. Maikap*
Chang Gung University, Taiwan
*Chang Gung Memorial Hospital, Taiwan

Anisha Roy, Jian-Tai Qiu* and Siddheswar Maikap*
Chang Gung University, Taiwan
*Chang Gung Memorial Hospital, Taiwan

Takashi Matsukawa, Takahiro Mori, Yoshihiro Sawada, Yohei Kinoshita, Yongxun Liu and Meishoku Masahara
National Institute of Advanced Industrial Science and Technology, Japan
*Tokyo Ohka Kogyo Co., Ltd., Japan

Linlin Cai, Wangyong Chen, Gang Du, Jinfeng Kang, Xing Zhang* and Xiaoyan Liu
Peking University, China
*National Key Laboratory of Science and Technology on Micro/Nano Fabrication, China

Wen Hsin Chang, Toshifumi Irisawa, Hiroyuki Ishii, Hiroyuki Hattori, Noriyuki Uchida and Tatsuro Maeda
National Institute of Advanced Industrial Science and Technology, Japan

Shih-Han Yi, Kuei-Shu Chang-Liao, Chia-Wei Hsu, Jiayi Huang and Tzung-Yu Wu
National Tsing Hua University, Taiwan

Hung-Yu Ye, Chia-Che Chung, I-Hsieh Wong, Huang-Siang Lan and C. W. Liu*
National Taiwan University, Taiwan
*National Nano Device Laboratories, Taiwan

Angada B. Sachid and Chenming Hu
University of California Berkeley, USA