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T2 ： RRAM I

1:30 PM~3:25 PM,Monday , April 25 Ballroom B
  • the photo of Speaker
    T2-1 ReRAM-based Analog Synapse and IMT Neuron Device for Neuromorphic System (Invited Talk)
    Kibong Moon, Euijun Cha, Daeseok Lee, Junwoo Jang, Jaesung Park, Hyunsang Hwang* 
    POSTECH, South Korea
  • T2-2 Oxygen chemical potential profile optimization for fast low current (<10µA) resistive switching in Oxide-based RRAM
    Monday , April 25
    C.Y. Chen*, **, L. Goux*, A. Fantini*, A. Redolfi*, G. Groeseneken*, **, and M. Jurczak*
    *imec, Belgium
    **KU Leuven, Belgium
  • T2-3 Excellent Resistance Variability Control of WOx ReRAM by a Smart Writing Algorithm
    Monday , April 25
    Yu-Hsuan Lin*, **, Jau-Yi Wu*, Ming-Hsiu Lee*, Tien-Yen Wang*, Yu-Yu Lin*, Feng-Ming Lee*, Dai-Ying Lee*, Erh-Kun Lai*, Kuang-Hao Chiang*, Hsiang-Lan Lung*, Kuang-Yeu Hsieh*, Tseung-Yuen Tseng**, and Chih-Yuan Lu*
    *Macronix International Co., Ltd., Taiwan
    **National Chiao Tung University, Taiwan
  • T2-4 Transient Control of Resistive Random Access Memory for High Speed and High Endurance Performance
    Monday , April 25
    Weijie Wang, Hongxin Yang, Victor Yiqian Zhuo, Minghua Li, Eng Keong Chua, and Yu Jiang
    Data Storage Institute, A*STAR, Singapore
  • T2-5 A Compact Model for the SET Parameter Variations of oxide RRAM Array
    Monday , April 25
    Lingjun Dai, Huaqiang Wu, Bin Gao, and He Qian
    Tsinghua Univeristy, China 

T4 ： Novel Device I

3:50 PM~5:05 PM,Monday , April 25 Ballroom B
  • the photo of Speaker
    T4-1 Self Assembled Ordered Phthalocyanine Monolayers on 2D Semiconductors for Subnanometer dielectric ALD Nucleation (Invited Talk)
    Monday , April 25
    Andrew C. Kummel
    University of California, San Diego, USA 
  • the photo of Speaker
    T4-2 Advanced Metrology and Inspection Solutions for a 3D World (Invited Talk)
    Monday , April 25
    Ingo Schulmeyer
    Carl Zeiss Microscopy GmbH, Germany
  • T4-3 P-type Surface Charge Transfer Doping of Black Phosphorus Field-effect Transistors
    Monday , April 25
    Yuchen Du, Lingming Yang, Hong Zhou, and Peide D. Ye
    Purdue University, USA 
  • T4-4 Performance Benchmarking of Monolayer and Bilayer Two-Dimensional Transition Metal Dichalcogenide (TMD) Based Logic Circuits
    Monday , April 25
    Chang-Hung Yu, Pin Su and Ching-Te Chuang
    National Chiao Tung University, Taiwan 
  • T4-5 Record high current density and low contact resistance in MoS2 FETs by ion doping
    Monday , April 25
    Sara Fathipour, Hua-Min Li, Maja Remškar*, Lingyen Yeh**, Wilman Tsai**, Yuming Lin**, Susan Fullerton-Shirey***, and Alan Seabaugh
    University of Notre Dame, USA
    *Jožef Stefan Institute, Slovenia
    **TSMC, Taiwan
    ***University of Pittsburgh, USA

T5 ： CMOS

10:20 AM~12:00 PM,Tuesday , April 26 Ballroom B
  • T5-1 SRAM cell performance analysis beyond 10-nm FinFET technology
    Tuesday , April 26
    Motoi Ichihashi, Youngtag Woo, and Sanjay Parihar
    GLOBALFOUNDRIES, USA
     
  • T5-2 Deep Understanding of Random Telegraph Noise (RTN) Effects on SRAM Stability
    Tuesday , April 26
    Dongyuan Mao, Shaofeng Guo, Runsheng Wang, Mulong Luo*, and Ru Huang
    Peking University, China
    * University of California, San Diego, USA
  • T5-3 Investigation of Local Heating Effect for 14nm Ge pFinFETs based on Monte Carlo Method
    Tuesday , April 26
    Longxiang Yin, Hai Jiang, Lei Shen, Juncheng Wang, Gang Du, and Xiaoyan Liu
    Peking University, China
  • T5-4 Corner Spacer Design for Performance Optimization of Multi-Gate InGaAs-OI FinFET with Gate-to-Source/Drain Underlap
    Tuesday , April 26
    Vita Pi-Ho Hu, Chang-Ting Lo*, Angada B. Sachid**, Pin Su*, and Chenming Hu**
    National Central University, Taiwan
    *National Chiao Tung University, Taiwan
    **University of California, Berkeley, USA
  • T5-5 Simulation of Nano-Scale Double Gate In0.53Ga0.47As nMOSFETs by a Deterministic BTE Solver
    Tuesday , April 26
    Shaoyan Di*, Kai Zhao*,**, Zhiyuan Lun*, Tiao Lu*, Gang Du*, and Xiaoyan Liu*
    *Peking University, China
    **Beijing Information Science and Technology University, China
  • T5-6 Optimization of Fin Profile and Implant in Bulk FinFET Technology (Late News Paper)
    Tuesday , April 26
    Y.-S. Wu, C.-H.Tsai, T. Miyashita, P.-N. Chen, B.-C. Hsu, P.-H. Wu, H.-H. Hsu, C.-Y. Chiang, H.-H. Liu, H.-L.Yang, K.-C Kwong, J.-C. Chiang, C.-W. Lee, Y.-J. Lin, C.-A. Lu, C.-Y. Lin, and S.-Y. Wu
    TSMC, Taiwan

T7 ： 3D IC I

10:20 AM~12:15 PM,Tuesday , April 26 Ballroom C
  • the photo of Speaker
    T7-1 Key Enablers for 3D Sequential Integration (Invited Talk)
    Tuesday , April 26
    Laurent Brunet
    Cea Leti, France
  • T7-2 Implementation of Memory Stacking on Logic Controller by Using 3DIC 300mm Backside TSV Process Integration
    Tuesday , April 26
    Shang-Chun Chen, Pei-Jer Tzeng, Yu-Chen Hsin, Chung-Chih Wang, Po-Chih Chang, Jui-Chin Chen, Yiu-Hsiang Chang, Tsuen-Sung Chen, Tzu-Chien Hsu, Hsiang-Hung Chang, Chau-Jie Zhan, Chia-Hsin Lee, Yung-Fa Chou, Ding-Ming Kwai, Tzu-Kun Ku, Pei-Hua Wang, and We-Chung Lo
    Industrial Technology Research Institute, Taiwan
  • T7-3 Impact of Transistor Technology on Power Savings in Monolithic 3D ICs
    Tuesday , April 26
    Sandeep Kumar Samal*,**, Deepak Kumar Nayak*, Motoi Ichihashi*, Srinivasa Banna*, and Sung Kyu Lim**
    *GLOBALFOUNDRIES, USA
    **Georgia Institute of Technology, USA
  • T7-4 A-SiGeC Thin Film Photovoltaic Enabled Self-Power Monolithic 3D IC Under Indoor Illumination
    Tuesday , April 26
    Ming-Hsuan Kao*, Chih-Chao Yang**, Tsung-Ta Wu**, Tung-Ying Hsieh**, Wen-Hsien Huang**, Hsing-Hsiang Wang**, Chang-Hong Shen**, Wen-Kuan Yeh**, Meng-Fan Chang***, and Jia-Min Shieh*,**
    *National Chiao Tung University, Taiwan
    **National Nano Device Laboratories, Taiwan
    ***National Tsing Hua University, Taiwan
  • T7-5 Reliable High-Voltage Amorphous InGaZnO TFT for Monolithic 3D Integration
    Tuesday , April 26
    Ming-Jiue Yu, Ruei-Ping Lin, Yu-Hong Chang, and Tuo-Hung Hou
    National Chiao Tung University, Taiwan

T8 ： Processing Technologies

1:30 PM~3:10 PM,Tuesday , April 26 Ballroom B
  • T8-1 Low Contact Resistivity (1.5×10-8 Ω-cm2) of Phosphorus-doped Ge by In-situ Chemical Vapor Deposition Doping and Laser Annealing
    Tuesday , April 26
    S. -H. Huang*, F. -L. Lu*, and C. W. Liu*, **
    *National Taiwan University, Taiwan
    ** National Nano Device Laboratories, Taiwan
  • T8-2 Low Temperature Microwave Annealed FinFETs with Less Vth Variability
    Tuesday , April 26
    K. Endo, Y. -J Lee*, Y. Ishikawa, F. -K. Hsueh*, P. -J. Sung*, Y. -X. Liu, T. Matsukawa, S. O'uchi, J. Tsukada, H. Yamauchi, and M. Masahara
    National Institute of Advanced Industrial Science and Technology, Japan
    * National Nano Device Laboratories, Taiwan
  • T8-3 In0.53Ga0.47As(001)-(2x4) and Si0.5Ge0.5(110) surface passivation by self-limiting deposition of silicon containing control layers
    Tuesday , April 26
    M. Edmonds, T. J. Kent, S. Wolf, K. Sardashti, M. Chang*, J. Kachian*, R. Droopad**, E. Chagarov, and A. C. Kummel
    University of California, San Diego, USA
    *Applied Materials, USA
    **Texas State University, USA
  • T8-4 Electrical Defect Spectroscopy and Reliability Prediction Through a Novel Simulation-Based Methodology
    Tuesday , April 26
    L. Larcher*,**, G. Sereni*, A. Padovani*,**, and L. Vandelli*,**
    *University of Modena and Reggio Emilia, Italy
    **MDLab s.r.l., Italy
  • T8-5 RF Performance of Passive Components on State-of-Art Trap Rich Silicon- on-Insulator Substrates
    Tuesday , April 26
    Lei Zhu*,**, Shuangke Liu*, F. Allibert***, E. Desbonnets***, I. Radu***, Xinen Zhu* and Yumin Lu*,**
    *Shanghai Industrial uTechnology Research Institute, China
    **Shanghai Institute of Microsystem and Information Technology, China
    ***SOITEC, France
  • T8-6 PMOS Contact Resistance Solution Compatible to CMOS Integration for 7 nm Node And Beyond (Late News Paper)
    C.-N. Ni, Y.-C. Huang, S. Jun, S. Sun, A. Vyas, F. Khaja, K.V. Rao, S. Sharma, N. Breil, M. Jin, C. Lazik, A. Mayur, J. Gelatos, H. Chung, R. Hung, M. Chudzik, N. Yoshida, and N. Kim
    Applied Materials, USA

T9 ： Novel Device II

1:30 PM~3:10 PM,Tuesday , April 26 Ballroom C
  • the photo of Speaker
    T9-1 The Opportunity for bulk GaN Power Device - Technology and Application (Invited Talk)
    Tuesday , April 26
    Zhen-Yu Li
    HUGA OPTOTECH INC., Taiwan
  • T9-2 Short-Channel BEOL ZnON Thin-Film Transistors with Superior Mobility Performance
    Tuesday , April 26
    Chin-I Kuan, Horng-Chih Lin, Pei-Wen Li, and Tiao-Yuan Huang
    National Chiao Tung University, Taiwan
  • T9-3 High-gain, Low-voltage BEOL Logic Gate Inverter Built with Film Profile Engineered IGZO Transistors
    Tuesday , April 26
    Rong-Jhe Lyu, Yun-Hsuan Chiu, Horng-Chih Lin, Pei-Wen Li, and Tiao-Yuan Huang
    National Chiao Tung University, Taiwan 
  • T9-4 Nickel-Phosphide Contact for Effective Schottky Barrier Modulation in Black Phosphorus P-Channel Transistors
    Tuesday , April 26
    Zhi-Peng Ling, Kausik Majumdar*, Soumya Sakar, Sinu Mathew, Jun-Tao Zhu, K. Gopinadhan, T. Venkatesan, and Kah-Wee Ang
    National University of Singapore, Singapore
    *Indian Institute of Science, India
  • T9-5 Experimental Demonstration of Performance Improvement with a Strain Boost Technique Tailored for 3-Dimensional Structure on Nano-Scaled Bulk pFinFETs
    Tuesday , April 26
    Ta-Chun Lin, Yun-Ju Sun, Ming-Huei Lin, Tomonari Yamamoto, and Shyh-Horng Yang
    Taiwan Semiconductor Manufacturing Company, Taiwan
  • T9-6 Fine charge sensing using a Silicon Nanowire for Biodetection
    Tuesday , April 26
    Corentin Carmignani, Olivier Rozeau, Pascal Scheiblin, Aurélie Thuaire, Patrick Reynaud, Sylvain Barraud, Thomas Ernst, Severine Cheramy, and Maud Vinet
    Cea Leti, France

T10 ： NVM

3:30 PM~4:30 PM,Tuesday , April 26 Ballroom B
  • T10-1 A TiO2-based Volatile Threshold Switching Selector Device with 10^7 non linearity and sub 100pA off current
    Tuesday , April 26
    Simone Cortese, Maria Trapatseli, Ali Khiat, and Themistoklis Prodromakis
    University of Southampton, United Kingdom
  • T10-2 Variable-length Gateless Transistor for Analog One-Time-Programmable Memory Applications
    Tuesday , April 26
    Po-Ruei Cheng, Chih-Sung Yang, Meng-Yin Hsu, Chrong Jung Lin, and Ya-Chin King
    National Tsing-Hua University, Taiwan

  • T10-3 An Innovative 1T1R Dipole Dynamic Random Access Memory (DiRAM) featuring High Speed, Ultra-low power, and Low Voltage Operation
    Tuesday , April 26
    E. R. Hsieh, C. H. Chuang, and Steve S. Chung
    National Chiao Tung University, Taiwan

T11 ： 3D IC II

3:30 PM~4:30 PM,Tuesday , April 26 Ballroom C
  • T11-1 Wafer-Level MOSFET with Submicron Photolysis Polymer Temporary Bonding Technology Using Ultra-Fast Laser Ablation for 3DIC Application
    Tuesday , April 26
    Chuan-An Cheng, Yu-Hsiang Huang, Chien-Hung Lin*, Chia-Lin Lee*, Shan-Chun Yang*, and Kuan-Neng Chen
    National Chiao Tung University, Taiwan
    *Kingyoup Optronics Co., Ltd, Taiwan
  • T11-2 Compact Modeling and Simulation of TSV with Experimental Verification
    Tuesday , April 26
    Jhih-Yang Yan, Sun-Rong Jan, Yi-Chung Huang, Huang-Siang Lan, C. W. Liu, Y.-H. Huang*, Bigchoug Hung*, K.-T. Chan*, Michael Huang*, and M.-T. Yang*
    National Taiwan University, Taiwan
    *MediaTek Inc., Taiwan
  • T11-3 Electrical Testing Structure for Stacking Error Measurement in 3D Integration
    Tuesday , April 26
    Shih-Wei Lee, Shu-Chiao Kuo, and Kuan-Neng Chen
    National Chiao Tung University, Taiwan

T13 ： RRAM II

10:20 AM~12:15 PM,Wednesday , April 27 Ballroom C
  • the photo of Speaker
    T13-1 Doping Technology for RRAM - Opportunities and Challenges (Invited Talk)
    Wednesday , April 27
    Blanka Magyari-Köpe*, Dan Duncan, Liang Zhao, and Yoshio Nishi
    Stanford University, USA
  • T13-2 Effect of Ti Buffer Layer on HfOx-Based Bipolar and Complementary Resistive Switching for Future Memory Applications
    Wednesday , April 27
    Sk. Ziaur Rahaman, Yu-De Lin, Pei-Yi Gu, Heng-Yuan Lee, Yu-Sheng Chen, Pan-Shiu Chen*, Kan-Hsueh Tsai, Wei-Su Chen, Chien-Hua Hsu, Po-Tsung Tu, Frederick T. Chen, Ming-Jinn Tsai, Tzu-Kun Ku, and Pei-Hua Wang
    Industrial Technology Research Institute, Taiwan
    *MingShin University of Science and Technology, Taiwan
  • T13-3 Low power/self-compliance of resistive switching elements modified with a conduction Ta-oxide layer through low temperature plasma oxidization of Ta thin film
    Wednesday , April 27
    Yu-Sheng Chen, Heng-Yuan Lee, Pang-Shiu Chen*, Y. D. Lin, Kan-Hsueh Tsai, C.H. Hsu, W. S. Chen, Ming-Jinn Tsai, T. K. Ku, and P. H. Wang
    Industrial Technology Research Institute, Taiwan
    *MingShin University of Science and Technology, Taiwan
  • T13-4 Comprehensive Study of Intrinsic Unipolar SiOx-Based ReRAM Characteristics in AC Frequency Response and Low Voltage (< 2V) Operation
    Wednesday , April 27
    Ying-Chen Chen, Yao-Feng Chang, Burt Fowler, Fei Zhou, Xiaohan Wu, Cheng-Chih Hsieh, Heng-Lu Chang, Chih-Hung Pan*, Min-Chen Chen*, Kuan-Chang Chang*, Tsung-Ming Tsai*, Ting-Chang Chang*, and Jack C. Lee
    The University of Texas at Austin, USA
    *National Sun Yat-Sen University , Taiwan
  • T13-5 A New Manufacturing Method of CMOS Logic Compatible 1T-CRRAM
    Wednesday , April 27
    Hung-Yu Chen, Hsien-Hao Chen, Yun-Feng Kao, Ping-Yu Chen, Ya-Chin King, and Chrong Jung Lin
    National Tsing-Hua University, Taiwan

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