Tuesday, April 26, 1:30 PM~4:45 PM

J3 ： 5G/ IoT

• 
  J3-1 Trend, Technology and Architecture of Small Cell in 5G Era
  

  Chun-Nan Liu

  Industrial Technology Research Institute, Taiwan

• 
  J3-2 Doherty technique for 5G RF and mm-wave Power Amplifiers
  

  Patrick Reynaert

  KU Leuven, Belgium

• 
  J3-3 Mixed Analog-Digital Pulse-Width Modulator for Massive-MIMO Transmitters
  

  Nikolaos Alexiou

  Infineon Technologies Austria AG, Austria

• 
  J3-4 Ultra-low Power SoC for Wearable & IoT
  

  Uming Ko

  MediaTek, USA

• 
  J3-5 5G and IoT
  

  Li Fung Chang

  Industrial Technology Research Institute, Taiwan

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Monday, April 25, 1:30 PM~3:15 PM

T1 ： Foundry - the place where innovation turns to daily life products

• 
  T1-1 IMEC enables : technology services for emerging economies, startups, academia
  

  Peter Lemmens

  Imec, Taiwan

• 
  T1-2 Foundry Solutions enabling next wave of SoC Innovations
  

  Subramani Kengeri

  GLOBALFOUNDRIES, USA

• 
  T1-3 Foudnry Technology and Service
  

  Jerry C. Hu

  United Microelectronics Corporation, Taiwan

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Monday, April 25, 3:35 PM~5:20 PM

T3 ： Silicon Photonics

• 
  T3-1 Industrialization of Silicon Photonics into a 300mm CMOS Fab
  

  Kirk Ouellette

  STMicroelectronics, Japan

• 
  T3-2 Recent progress of 850nm VCSEL for oeic application
  

  Hao-Chung Kuo

  National Chiao Tung University, Taiwan

• 
  T3-3 Integrated Group IV Photodetectors via Rapid Melt Growth Method
  

  Ming-Chang Lee

  National Tsing Hua University, Taiwan 

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Tuesday, April 26, 10:20 AM~12:05 PM

T6 ： Advanced Memory Technologies

• 
  T6-1 A Novel Double-Density and Pitch Scalable Single-Gate Vertical-Channel (SGVC) 3D NAND Flash featuring a Flat-Channel Device
  

  Hang-Ting Lue

  Macronix International Co., Ltd., Taiwan

• 
  T6-2 Ultra-Low-Energy IOT Memory Architectures Based on Embedded STT-MRAM
  

  Yu Lu

  Hikstor Technology Co. Ltd, China

• 
  T6-3 Functionality and reliability of resistive RAM (RRAM) for non-volatile memory applications
  

  Gabriel Molas

  Cea Leti, France

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Wednesday, April 27, 10:20 AM~12:05 PM

T12 ： Green Electronics

• 
  T12-1 On the Continuation of IC Innovation Against All Odds
  

  Paolo A. Gargini

  ITRS, USA

• 
  T12-2 Review of Negative Capacitance Transistors
  

  Sayeef Salahuddin

  University of California, Berkeley, USA

• 
  T12-3 Atomistic Simulation of Gate-All-Around GaSb/InAs Nanowire TFETs Using a Fast Full-Band Mode-Space NEGF Model
  

  Aryan Afzalian

  TSMC, Belgium

• 
  T12-4 Band Structure Engineered Germanium-Tin (GeSn) p-channel Tunnel Transistors (Late News Paper)
  

  Rahul Pandey*, Ramkrishna Ghosh*, and Suman Datta*,**

  *The Pennsylvania State University, USA

  **University of Notre Dame, USA

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PAGE CONTENTS

• -J3 :
   5G/ IoT
• -T1 :
   Foundry - the place where innovation turns to daily life products
• -T3 :
   Silicon Photonics
• -T6 :
   Advanced Memory Technologies
• -T12 :
   Green Electronics