J3 5G/ IoT

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    J3-1 Trend, Technology and Architecture of Small Cell in 5G Era

    Chun-Nan Liu
    Industrial Technology Research Institute, Taiwan

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    J3-2 Doherty technique for 5G RF and mm-wave Power Amplifiers
    Patrick Reynaert
    KU Leuven, Belgium
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    J3-3 Mixed Analog-Digital Pulse-Width Modulator for Massive-MIMO Transmitters
    Nikolaos Alexiou
    Infineon Technologies Austria AG, Austria
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    J3-4 Ultra-low Power SoC for Wearable & IoT
    Uming Ko
    MediaTek, USA
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    J3-5 5G and IoT
    Li Fung Chang
    Industrial Technology Research Institute, Taiwan

T1 Foundry - the place where innovation turns to daily life products

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    T1-1 IMEC enables : technology services for emerging economies, startups, academia
    Peter Lemmens
    Imec, Taiwan

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    T1-2 Foundry Solutions enabling next wave of SoC Innovations

    Subramani Kengeri
    GLOBALFOUNDRIES, USA

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    T1-3 Foudnry Technology and Service
    Jerry C. Hu

    United Microelectronics Corporation, Taiwan


T3 Silicon Photonics

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    T3-1 Industrialization of Silicon Photonics into a 300mm CMOS Fab
    Kirk Ouellette
    STMicroelectronics, Japan
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    T3-2 Recent progress of 850nm VCSEL for oeic application
    Hao-Chung Kuo
    National Chiao Tung University, Taiwan
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    T3-3 Integrated Group IV Photodetectors via Rapid Melt Growth Method
    Ming-Chang Lee
    National Tsing Hua University, Taiwan 

T6 Advanced Memory Technologies

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    T6-1 A Novel Double-Density and Pitch Scalable Single-Gate Vertical-Channel (SGVC) 3D NAND Flash featuring a Flat-Channel Device
    Hang-Ting Lue
    Macronix International Co., Ltd., Taiwan

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    T6-2 Ultra-Low-Energy IOT Memory Architectures Based on Embedded STT-MRAM
    Yu Lu

    Hikstor Technology Co. Ltd, China

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    T6-3 Functionality and reliability of resistive RAM (RRAM) for non-volatile memory applications
    Gabriel Molas

    Cea Leti, France


T12 Green Electronics

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    T12-1 On the Continuation of IC Innovation Against All Odds
    Paolo A. Gargini
    ITRS, USA
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    T12-2 Review of Negative Capacitance Transistors
    Sayeef Salahuddin
    University of California, Berkeley, USA
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    T12-3 Atomistic Simulation of Gate-All-Around GaSb/InAs Nanowire TFETs Using a Fast Full-Band Mode-Space NEGF Model
    Aryan Afzalian
    TSMC, Belgium
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    T12-4 Band Structure Engineered Germanium-Tin (GeSn) p-channel Tunnel Transistors (Late News Paper)
    Rahul Pandey*, Ramkrishna Ghosh*, and Suman Datta*,**
    *The Pennsylvania State University, USA
    **University of Notre Dame, USA

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